Multi-electron beam exposure method and apparatus and device manufacturing method
AssigneeCanon Kabushiki Kaisha
InventorMasato Muraki
Life of this patent
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Abstract
A method of simultaneously drawing patterns in a plurality of areas on a surface to be exposed by using a plurality of electron beams is characterized in that drawing patterns are classified into a plurality of groups on the basis of the design rules, and patterns are drawn while the minimum deflection width is changed in units of groups. Pattern groups are sequentially drawn area by area. The diameter of each electron beam or the settling time therefor is changed in accordance with switching of the minimum deflection width.
Claims10
A multi-electron beam exposure method of simultaneously drawing in a plurality of areas of a surface to be exposed by using a plurality of electron beams, comprising classifying drawing patterns into a plurality of groups in accordance with design rules, and drawing while changing a minimum deflection width of each electron beam in units of groups.
A multi-electron beam exposure method of deflecting a plurality of electron beams onto a surface to be exposed of an object with a minimum deflection width as a unit on the basis of drawing data, independently controlling irradiation of each electron beam for each deflecting operation, and drawing a pattern in an element exposure area in units of electron beams, thereby drawing in a subfield consisting of the plurality of element exposure areas and sequentially drawing in a plurality of subfields, comprising:
- the step of classifying pattern groups in the drawing data into a plurality of groups on the basis of design rules, and determining an optimal minimum deflection width for each group in drawing each pattern group;
- the first dividing step of dividing the drawing data in units of the subfields;
- the second dividing step of dividing a subfield having a plurality of pattern groups into subfields each having only one pattern group;
- and
- the step of, in exposing a subfield having only one pattern group, switching the minimum deflection width to an optimal minimum deflection width corresponding to the group, and deflecting the plurality of electron beams with the optimal minimum deflection width as a unit, thereby drawing a pattern.
Dependencies are inferred from the claim text.