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US 6,552,320 B1Granted
Image sensor structure
AssigneeUnited Microelectronics Corp.
InventorJui-Hsiang Pan
Life of this patent
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Abstract
An image sensor structure. A first PN photodiode is located in a photo-sensing region of a substrate. A second PN photodiode is located in the substrate above the first PN photodiode. An N-type terminal of the first PN photodiode connects to a source/drain region of a first transistor. A contact is coupled with the second PN photodiode. The contact connects to a gate of a second transistor.
Claims5
An image sensor structure comprising:
- a substrate of a first conductive type;
- a well of a second conductive type located in the substrate;
- at least a first doped region of the first conductive type located in a surface portion of the well, wherein said well surrounds said first doped region;
- at least a second doped region of the first conductive type located in a surface portion of the well, wherein the first doped region is deeper than the second doped region, and the first doped region and the second doped region are alternating concentric regions that frame each other
- a terminal located in the well, wherein the terminal connects to a source/drain region of a transistor of a circuit region;
- and
- a contact coupled with the well, wherein the contact connects to a gate of a second transistor.
4 more elements
Dependencies are inferred from the claim text.