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US 6,551,949 B2Granted
Deposition method of dielectric films having a low dielectric constant
AssigneeSTMicroelectronics S.r.l.
InventorMichele Vulpio
Life of this patent
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Abstract
A method is for low-dielectric-constant film deposition on a surface of a semiconductor substrate. The deposition may be by chemical vapor deposition (CVD) techniques and may include a wide class of precursor monomeric compounds, namely organosilanes.
Claims10
A method for making a semiconductor device comprising:
- depositing a dielectric film having a low dielectric constant on a semiconductor substrate by chemical vapor deposition (CVD) using a monomeric precursor compound comprising oxygenated organosilanes, the oxygenated organosilanes having at least one silicon-oxygen-benzene ring bond.
A method for making a semiconductor device comprising:
- depositing a dielectric film having a low dielectric constant on a semiconductor substrate using a monomeric precursor compound comprising oxygenated organosilanes, the oxygenated organosilanes having at least one silicon-oxygen-benzene ring bond.
Dependencies are inferred from the claim text.