Two-step oxidation process for oxidizing a silicon substrate wherein the first step is carried out at a temperature below the viscoelastic temperature of silicon dioxide and the second step is carried out at a temperature above the viscoelastic temperature

A process for fabricating an oxide, the process comprising:

• (a) exposing said substrate to a first oxidizing ambient, wherein exposing said substrate to a first oxidizing ambient includes increasing from an initial temperature to a first temperature below a threshold temperature at a first ramp rate, increasing from said first temperature to a second temperature below said threshold temperature at a second ramp rate, and growing at least a portion of said oxide;
• (b) exposing said substrate to a second oxidizing ambient, wherein exposing said substrate to a second oxidizing ambient includes increasing from said second temperature to a third temperature at a third ramp rate, and increasing from said third temperature to a temperature above said threshold temperature at a fourth ramp rate;
• and
• (c) cooling said substrate to a temperature below said threshold temperature, wherein said oxide has a thickness of 15 Å or less.