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US 6,551,945 B2Granted
Process for manufacturing a semiconductor device
AssigneeNEC Corporation
InventorsHidemitsu Aoki, Kaori Watanabe
Life of this patent
Estimating the term…
Abstract
A ruthenium containing metal 6′ adhering to a periphery of a device forming area, an end face and a rear face in a silicon substrate 10 is removed using a first remover containing (a) at least one compound selected from the group consisting of salts containing chlorate, perchlorate, iodate, periodate, salts containing bromine oxide ion, salts containing manganese oxide ion and salts containing tetravalent cerium ion and (b) at least one acid selected from the group consisting of nitric acid, acetic acid, iodic acid and chloric acid. After the removing treatment, the substrate is washed with hydrofluoric acid to remove the residual remover.
Claims57
A process for manufacturing a semiconductor device, comprising the steps of:
- depositing an insulating film in a device forming area on a semiconductor device;
- depositing a barrier metal film on the insulating film;
- depositing a first ruthenium film on the barrier metal film;
- removing undesired ruthenium containing metal resulting from the deposit of said first ruthenium film adhering to an area other than the device forming area using a first remover containing (a) at least one compound selected from the group consisting of salts containing chlorate, perchlorate, iodate, periodate, salts containing bromine oxide ion, salts containing manganese oxide ion and salts containing tetravalent cerium ion and (b) at least one acid selected from the group consisting of nitric acid, acetic acid, iodic acid and chloric acid, but excluding the combination of acetic acid and salts containing tetravalent cerium ion;
- removing the residual first remover using a first washing,
- sequentially depositing a capacitance insulating film and a second ruthenium film after patterning the first ruthenium film,
- removing undesired ruthenium containing metal resulting from the deposit of said second ruthenium film adhering to an area other than the device forming area using a second remover containing (a) at least one compound selected from the group consisting of salts containing chlorate, percholate, iodate, periodate, salts containing bromine oxide ion, salts containing manganese oxide ion and salts containing tetravalent cerium ion and (b) at least one acid selected from the group consisting of nitric acid, acetic acid, iodic acid and chloric acid, but excluding the combination of acetic acid and salts containing tetravalent cerium ion;
- and
- removing the residual second remover using a second washing.
6 more elements
A process for manufacturing a semiconductor device, comprising the steps of:
- depositing an insulating film in a device forming area on a semiconductor substrate,
- depositing a barrier metal film on the insulating film;
- depositing a first ruthenium film on the barrier metal film;
- removing undesired ruthenium containing metal resulting from the deposit of said first ruthenium film adhering to an area other than the device forming area using a first remover containing (a) at least one compound selected from the group consisting of salts containing chlorate, perchlorate, iodate, periodate, salts containing bromine oxide ion, salts containing manganese oxide ion and salts containing tetravalent cerium ion and (b) at least one acid selected from the group consisting of nitric acid, acetic acid, iodic acid and chloric acid, but excluding the combination of acetic acid and salts containing tetravalent cerium ion;
- sequentially depositing a capacitance insulating film and a second ruthenium film after patterning the first ruthenium film,
- removing undesired ruthenium containing metal resulting from the deposit of said second ruthenium film adhering to an area other than the device forming area using a second remover containing (a) at least one compound selected from the group consisting of salts containing chlorate, percholate, iodate, periodate, salts containing bromine oxide ion, and salts containing manganese oxide ion and salts containing tetravalent cerium ion and (b) at least one acid selected from the group consisting of nitric acid, acetic acid, iodic acid and chloric acid, but excluding the combination of acetic acid and salts containing tetravalent cerium;
- and
- removing the residual second remover using a second washing.
5 more elements
A process for manufacturing a semiconductor device, comprising the steps of:
- depositing an insulating film in a device forming area on a semiconductor substrate,
- depositing a barrier metal film on the insulating film;
- depositing a first ruthenium film on the barrier metal film;
- sequentially depositing a capacitance insulating film and a second ruthenium film after patterning the first ruthenium film,
- removing a ruthenium containing metal adhering to an area other than the device forming area using a remover containing (a) at least one compound selected from the group consisting of salts containing chlorate, perchlorate, iodate, periodate, salts containing bromine oxide ion, salts containing manganese oxide ion and salts containing tetravalent cerium ion and (b) at least one acid selected from the group consisting of nitric acid, acetic acid, iodic acid and chloric acid, but excluding the combination of acetic acid and salts containing tetravalent cerium ion;
- and
- removing the residual remover using a washing.
4 more elements
A process for manufacturing a semiconductor device comprising the step of sequentially forming a lower electrode film, a capacitance insulating film and an upper electrode film in a device forming area on a semiconductor substrate,
- wherein the lower and/or the upper electrode films are made of ruthenium and
- comprising the steps of after deposing the ruthenium films, removing a ruthenium containing metal adhering to an area other than the device forming area using a remover containing (a) at least one compound selected from the group consisting of salts containing chlorate, perchlorate, iodate, periodate, salts containing bromine oxide ion, salts containing manganese oxide ion and salts containing tetravalent cerium ion and (b) at least one acid selected from the group consisting of nitric acid, acetic acid, iodic acid and chloric acid, but excluding the combination of acetic acid and salts containing tetravalent cerium ion;
- and then removing the residual remover using a washing.
A process for manufacturing a semiconductor device comprising the steps of:
- depositing a ruthenium film in a device forming area on a semiconductor substrate, and
- spraying on a given area on the semiconductor substrate a remover containing (a) at least one compound selected from the group consisting of salts containing chlorate, perchorate, iodate, periodate, salts containing bromine oxide ion, salts containing manganese oxide ion and salts containing tetravalent cerium ion and (b) at least one acid selected from the group consisting of nitric acid, acetic acid, iodic acid and chloric acid, but excluding the combination of salts containing tetravalent cerium ion and acetic acid, while rotating the substantially horizontal semiconductor substrate to remove a ruthenium containing metal adhering to an area other than the device forming area.
Dependencies are inferred from the claim text.