Loading patent…
AssigneeSTMicroelectronics S.r.l.
InventorsPiero Giorgio Fallica, Davide Giuseppe Patti, Cirino Rapisarda
Estimating the term…
A process including the steps of: carrying out a directional etching in a semiconductor material body to form trenches having a first width; carrying out an isotropic etching of the semiconductor material body under the trenches to form cavities having a width larger than the trenches; covering the walls of the cavities with dielectric material; depositing non-conducting material different from thermal oxide to fill the cavities at least partially, so as to form a single-crystal island separated from the rest of the semiconductor material body. The isotropic etching permits the formation of at least two adjacent cavities separated by a support region of semiconductor material, which is oxidized together with the walls of the cavities to provide a support to the island prior to filling with non-conducting material.
A process for manufacturing a wafer of semiconductor material, comprising:
A wafer of semiconductor material, comprising a semiconductor material body surrounding an insulating structure of non-conducting material, an island surrounded by said insulating structure and a support structure for said island, arranged laterally to or under said island, between said island and said semiconductor material body.
An integrated power device, comprising a semiconductor material body surrounding an insulating structure of non-conducting material, and an island surrounded by said insulating structure;
A process for manufacturing integrated circuits, comprising:
Dependencies are inferred from the claim text.