Back to results
US 6,551,943 B1Granted
Wet clean of organic silicate glass films
AssigneeTexas Instruments Incorporated
InventorsMona M. Eissa, Troy A. Yocum
Life of this patent
Estimating the term…
Abstract
A post-etch clean up process for OSG. After the trench (112)/via (114) etch in a dual damascene process, a wet chemistry comprising HF and H2O2 is used to remove residues without etching or damaging the OSG film in the ILD (108) or IMD (110).
Claims2
A method for fabricating an integrated circuit, comprising the steps of:
- forming an interlevel dielectric layer comprising a first organic silicate glass (OSG) film over a semiconductor body;
- forming an intrametal dielectric layer comprising a second OSG film over said interlevel dielectric layer;
- patterning and etching a trench in said intrametal dielectric layer;
- performing a clean up process including the step of subjecting at least a portion of said intrametal dielectric layer to a solution comprising HF and H2O2;
- and
- performing an H2 passivation to remove any copper oxide after the step of performing a clean up process.
3 more elements
A method for fabricating an integrated circuit, comprising the steps of:
- forming an interlevel dielectric layer comprising a first organic silicate glass (OSG) film over a semiconductor body;
- forming an intrametal dielectric layer comprising a second OSG film over said interlevel dielectric layer;
- patterning and etching a trench in said intrametal dielectric layer;
- performing a clean up process including the step of subjecting at least a portion of said intrametal dielectric layer to a solution comprising HF and H2O2;
- and
- providing a solution of less than 5% HNO3 to remove any copper oxide after said step of performing a clean up process.
3 more elements
Dependencies are inferred from the claim text.