N2/H2 chemistry for dry development in top surface imaging technology
AssigneeTaiwon Semiconductor Manufacturing Company
InventorsTsang-Jiuh Wu, Li-Te S. Lin, Li-Chih Chao
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Abstract
A method of bi-layer top surface imaging, comprising the following steps. A structure having a lower layer formed thereover is provided. An upper silicon-containing photoresist layer is formed upon the lower layer. The upper silicon-containing photoresist layer is selectively exposed to form upper silicon-containing photoresist layer exposed portions. The upper silicon-containing photoresist layer exposed portions and the portions of the lower layer below the upper silicon-containing photoresist layer exposed portions are removed using an O2-free N2/H2 plasma etch.
Claims36
A method of bi-layer top surface imaging, comprising the steps of:
- providing a structure having a lower organic layer formed thereover;
- forming an upper silicon-containing photoresist layer upon the lower organic layer;
- selectively exposing the upper silicon-containing photoresist layer to form upper silicon-containing photoresist layer exposed portions;
- and
- removing the upper silicon-containing photoresist layer exposed portions and the portions of the lower organic layer below the upper silicon-containing photoresist layer exposed portions using an O2-free N2/H2 plasma etch.
A method of bi-layer top surface imaging, comprising the steps of:
- providing a structure having a lower organic layer formed thereover;
- forming an upper silicon-containing photoresist layer upon the lower organic layer;
- selectively exposing the upper silicon-containing photoresist layer to form upper silicon-containing photoresist layer exposed portions;
- and
- removing the upper silicon-containing photoresist layer exposed portions and the portions of the lower organic layer below the upper silicon-containing photoresist layer exposed portions using an O2-free N2/H2 plasma etch conducted at a pressure of less than about 110 mTorr.
A method of bi-layer top surface imaging, comprising the steps of:
- A providing a structure having a lower organic layer formed thereover;
- forming an upper silicon-containing photoresist layer upon the lower organic layer;
- selectively exposing the upper silicon-containing photoresist layer to form upper silicon-containing photoresist layer exposed portions;
- and
- removing the upper silicon-containing photoresist layer exposed portions and the portions of the lower organic layer below the upper silicon-containing photoresist layer exposed portions using an O2-free N2/H2 plasma etch conducted at:
- a pressure of less than about 110 mTorr;
- a temperature of from about −100 to 50° C.;
- an N2:H2 ratio of from about 2:1 to 1:10;
- a bias power:
- of from about 20 to 500 watts;
- and
- a total gas flow of from about 20 to 2000 sccm.
Dependencies are inferred from the claim text.