Process for fabricating semiconductor device and apparatus for fabricating semiconductor device

A method for manufacturing a semiconductor device comprising:

• forming an interlayer insulating film comprising a resin provided over a silicon substrate containing a transistor therein;
• flattening an upper surface of said interlayer insulating film by chemical mechanical polishing;
• and
• forming a wiring over said upper surface of said interlayer insulating film after said flattening.

A method for manufacturing a semiconductor device comprising:

• forming an interlayer insulating film comprising a resin provided over a transistor and over an electrode;
• flattening an upper surface of said interlayer insulating film by chemical mechanical polishing;
• and
• forming a wiring over said upper surface of said interlayer insulating film after said flattening.

A method for manufacturing a semiconductor device comprising:

• forming an electrode over a silicon substrate containing a transistor therein;
• forming an interlayer insulating film comprising a resin over said electrode;
• flattening an upper surface of said interlayer insulating film by chemical mechanical polishing;
• and
• forming a wiring over said upper surface of said interlayer insulating film after said flattening.

A method for manufacturing a semiconductor device comprising:

• forming an interlayer insulating film comprising a resin provided over a transistor and over an electrode;
• forming a contact hole in said interlayer insulating film;
• forming a first wiring for contact in said contact hole;
• flattening an upper surface of said interlayer insulating film and an upper surface of said first wiring at the same time by chemical mechanical polishing;
• and
• forming a second wiring over said upper surface of said interlayer insulating film after said flattening.

A method for manufacturing a semiconductor device comprising:

• forming an electrode over a silicon substrate containing a transistor therein;
• forming an interlayer insulating film comprising a resin over said electrode;
• forming a contact hole in said interlayer insulating film;
• forming a first wiring for contact in said contact hole;
• and
• flattening an upper surface of said interlayer insulating film and an upper surface of said first wiring at the same time by chemical mechanical polishing;
• and
• forming a second wiring over said upper surface of said interlayer insulating film after said flattening.

A method for manufacturing a semiconductor device comprising:

• forming an insulating film comprising a resin over a silicon substrate containing a transistor therein;
• flattening an upper surface of said insulating film by chemical mechanical polishing;
• and
• forming a thin film transistor over said insulating film after said flattening.

A method for manufacturing a semiconductor device comprising:

• forming a first insulating film over a silicon substrate containing a first transistor therein;
• flattening an upper surface of said first insulating film by chemical mechanical polishing;
• forming a second insulating film over said first insulating film after said chemical mechanical polishing;
• and
• forming a semiconductor film comprising silicon to become an active layer of a thin film transistor, said semiconductor film provided over said second insulating film.

A method for manufacturing a semiconductor device comprising:

• forming a first insulating film comprising a resin over a silicon substrate containing a first transistor therein;
• flattening an upper surface of said first insulating film by chemical mechanical polishing;
• forming a second insulating film over said first insulating film after said chemical mechanical polishing;
• and
• forming a semiconductor film comprising silicon to become an active layer of a thin film transistor, said semiconductor film provided over said second insulating film.

A method for manufacturing a semiconductor device comprising:

• forming a first interlayer insulating film over a substrate;
• subjecting a surface of said first interlayer insulating film to a first chemical mechanical polishing;
• forming a wiring over said first interlayer insulating film after said first chemical mechanical polishing;
• forming a second interlayer insulating film over said wiring;
• subjecting a surface of said second interlayer insulating film to a second chemical mechanical polishing;
• and
• forming a thin film transistor over said second interlayer insulating film after said second chemical mechanical polishing.

A method for manufacturing a semiconductor device comprising:

• forming a first interlayer insulating film over a substrate comprising silicon, said substrate containing a first transistor therein;
• subjecting a surface of said first interlayer insulating film to a first chemical mechanical polishing;
• forming a wiring over said first interlayer insulating film after said first chemical mechanical polishing;
• forming a second interlayer insulating film over said wiring;
• subjecting a surface of said second interlayer insulating film to a second chemical mechanical polishing;
• and
• forming a thin film transistor over said second interlayer insulating film after said second chemical mechanical polishing.