Abrasive finishing with lubricant and tracking

A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface having a finishing cycle time, the method comprising the steps of:

• providing the tracked semiconductor wafer having tracked information;
• providing an abrasive finishing element finishing surface;
• providing an organic lubricant to an operative finishing interface comprising the interface formed between the abrasive finishing element finishing surface and the semiconductor wafer surface;
• providing a finishing control subsystem having:
• at least three operative process sensors for sensing in situ process information;
• access to the tracked information;
• and
• a processor to evaluate the in situ process information and the tracked information;
• applying an operative finishing motion in an operative finishing interface forming in the operative finishing interface a first uniform region having a first organic lubrication and a second uniform region having a second organic lubrication and wherein the first and the second uniform regions have different coefficients of friction;
• and
• changing a plurality of control parameters in response to an evaluation of both the in situ process information sensed with the at least three operative process sensors and the tracked information, wherein changing the control parameters changes the coefficient of friction in the first uniform region during at least a portion of the finishing cycle time.

A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface and a finishing cycle time, the method comprising the steps of:

• providing the tracked semiconductor wafer having tracked information;
• providing an abrasive finishing element finishing surface;
• providing an organic lubricant to the operative finishing interface comprising the interface formed between the abrasive finishing element finishing surface and the semiconductor wafer surface;
• providing a finishing control subsystem having:
• at least three operative process sensors including at least two operative friction sensors for sensing in situ process information;
• access to the tracked information;
• and
• a processor to evaluate the in situ process information and the tracked information;
• applying an operative finishing motion in an operative finishing interface forming in the operative finishing interface a first uniform region having a first organic lubrication and a second uniform region having a second organic lubrication and wherein the first and the second uniform regions have different coefficients of friction;
• evaluating both the in situ process information sensed with the at least three operative process sensors and the tracked information;
• and
• changing a plurality of control parameters at least 4 times to change the coefficient of friction in at least the first uniform region at least 4 times during the finishing cycle time.

A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface and at least one uniform region and a finishing cycle time, the method comprising the steps of:

• providing the tracked semiconductor wafer having tracked information;
• providing an abrasive finishing element finishing surface;
• providing a reactive lubricant to the operative finishing interface comprising the interface formed between the abrasive finishing element finishing surface and the semiconductor wafer surface;
• providing a finishing control subsystem having:
• at least three operative process sensors for sensing in situ process information;
• access to the tracked information;
• and
• a processor to evaluate the in situ process information and the tracked information;
• applying an operative finishing motion in the operative finishing interface forming a coefficient of friction in a uniform region having a reactive lubrication;
• and
• evaluating both the in situ process information sensed with the at least three operative process sensors and the tracked information;
• and
• changing a plurality of control parameters at least 10 times to change the coefficient of friction at least 4 times during the finishing cycle time in at least one uniform region having the reactive lubrication.

A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface and a finishing cycle time, the method comprising the steps of:

• providing the tracked semiconductor wafer having tracked information;
• providing an abrasive finishing element finishing surface;
• providing a finishing aid to an operative finishing interface comprising the interface formed between the abrasive finishing element finishing surface and the semiconductor wafer surface;
• providing a finishing control subsystem having:
• at least three operative process sensors for sensing in situ process information;
• access to the tracked information;
• and
• a processor to evaluate the in situ process information and the tracked information;
• applying an operative finishing motion in the operative finishing interface forming a coefficient of friction in a uniform region of the semiconductor wafer surface having the finishing aid;
• and
• evaluating both the in situ process information sensed with the at least three operative process sensors and the tracked information;
• and
• changing with the finishing control subsystem a plurality of control parameters to change finishing at least 4 times during at least a portion of the finishing cycle time.

A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface and a finishing cycle time, the method comprising the steps of:

• providing the tracked semiconductor wafer having tracked information;
• providing an abrasive finishing element finishing surface;
• providing an organic lubricant to the operative finishing interface comprising the interface formed between the abrasive finishing element finishing surface and the semiconductor wafer surface;
• providing a finishing control subsystem having:
• at least five operative process sensors for sensing in situ process information;
• access to the tracked information;
• and
• a processor to evaluate the in situ process information and the tracked information;
• applying an operative finishing motion in an operative finishing interface forming a coefficient of friction with an organic lubrication in a uniform region of the semiconductor wafer surface;
• and
• evaluating both the in situ process information sensed with the at least five operative process sensors and the tracked information;
• and
• changing a plurality of control parameters at least 10 times to change the coefficient of friction at least 4 times during the finishing cycle time in at least the uniform region having the organic lubrication.