Etching an organic material layer, particularly for producing interconnections of the damascene type

A method for forming a damascene type interconnection for a semiconductor device, the method comprising:

• forming a first organic dielectric material layer on a surface of the semiconductor device;
• forming an inorganic barrier layer on the first organic dielectric material layer;
• forming an inorganic masking layer on the inorganic barrier layer;
• forming a masking resin layer on the inorganic masking layer;
• patterning the masking resin layer and etching through the inorganic masking layer to expose the inorganic barrier layer;
• removing remaining portions of the masking resin layer;
• etching through the exposed inorganic barrier layer to expose the organic dielectric material layer, and removing remaining portions of the inorganic masking layer during a same operation;
• etching the exposed first organic dielectric material layer while using the inorganic barrier layer as a mask;
• and
• filling etched portions of the first organic dielectric material layer and the inorganic barrier layer with a conductive material.