Semiconductor device and method of fabrication thereof, circuit board, and electronic equipment
AssigneeSeiko Epson Corporation
InventorsHideki Yuzawa, Kazunori Sakurai
Life of this patent
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Abstract
A method of fabricating a semiconductor device including: a first step of bonding a conductive wire to any one of a plurality of electrodes of a semiconductor chip; a second step of tearing off the bonded conductive wire in such a manner that a part remains on one of the electrodes; a third step of pressing the part of the conductive wire remaining on the one of the electrodes, to form a bump having a head portion and a base portion; and, a fourth step of bonding a lead to the bump; wherein a distance D between an upper surface of the base portion of the bump and an upper surface of the head portion is such that: 0<D≦6 μm.
Claims22
A method of fabricating a semiconductor device comprising:
- (a) bonding a conductive wire to any one of a plurality of electrodes of a semiconductor chip;
- (b) tearing off the bonded conductive wire in such a manner that a part of the conductive wire remains on the one of the electrodes;
- (c) pressing the part of the conductive wire that remains on the one of the electrodes, to form a bump comprising a base portion in contact with the one of the electrodes and a head portion of a width that is less than the width of the base portion, the head portion projecting from the base portion, the bump having a groove along a boundary between the head portion and the base portion, the groove having a depth in a direction of a thickness of the base portion;
- and
- (d) bonding the bump and a lead.
A semiconductor device comprising:
- a substrate having a lead formed thereon;
- and
- a semiconductor chip having a bump formed thereon and electrically connected to the lead, the bump having a base portion and a head portion of a width smaller than the width of the base portion, the head portion projecting from the base portion, the bump having a groove along a boundary between the head portion and the base portion, the groove having a depth toward the semiconductor chip in a direction of a thickness of the base portion.
A method for fabricating a semiconductor device comprising:
- (a) bonding a conductive wire to any one of a plurality of electrodes of a semiconductor chip;
- (b) tearing off the bonded conductive wire in such a manner that a part of the conductive wire remains on the one of the electrodes;
- (c) pressing the part of the conductive wire that remains on the one of the electrodes, to form a bump comprising a base portion in contact with the one of the electrodes and a head portion of a width that is less than the width of the base portion, the head portion projecting from the base portion, the base portion having a higher portion than a boundary between the head portion and the base portion;
- and
- (d) bonding the bump and a lead.
A semiconductor device comprising:
- a substrate having a lead formed thereon;
- and
- a semiconductor chip having a bump formed thereon and electrically connected to the lead, the bump having a base portion and a head portion of a width smaller than the width of the base portion, the head portion projecting from the base portion, the base portion having a higher portion than a boundary between the head portion and the base portion.
Dependencies are inferred from the claim text.