Method of manufacturing solid-state image pickup device
AssigneeSony Corporation
InventorMasanori Ohashi
Life of this patent
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Abstract
In a method of manufacturing a solid-state image pickup device having a virtual gate structure, in a process of forming a profile of a sensor portion, when ion implantation to form a p+ type layer at a substrate surface side is carried out while the ion implantation direction is tilted with respect to the substrate surface, the ion implantation is divisively carried out at plural times and from multiple ion implantation directions so that the total dose amount is matched, whereby impurities can be implanted into any area of the sensor portion and thus no impurities-unformed area occurs.
Claims5
A method of manufacturing a solid-state image pickup device having a virtual gate structure where a substrate surface side of a sensor area is pinned, characterized in that when ion implantation of impurities for pinning the substrate surface side of the sensor area is performed, the ion implantation is carried out multiple times and from multiple ion implantation directions.
A method of manufacturing a solid-state image pickup device comprising the steps of:
- forming a plurality of transfer electrodes;
- after the step of forming the plurality of transfer electrodes, pinning a surface of the sensor area by ion implantation that is performed in multiple steps from multiple ion implantation directions.
Dependencies are inferred from the claim text.