Loading patent…
AssigneeTRW Inc.
InventorsMichael E. Barsky, Harvey N. Rogers, Vladimir Medvedev, Yaochung Chen, Richard Lai
Estimating the term…
A method is provided for backside processing a semiconductor wafer (10) including applying a polymer based protective coating (16) on the wafer, depositing a barrier layer of ceramic (18) on the protective coating, and coating the ceramic layer with a thermoplastic based adhesive (20). Thereafter, the wafer (10) is bonded to a perforated substrate (22) and then lapped and polished to a desired thickness and patterned with an etch mask. A high temperature plasma etching process is then used to etch via holes in the wafer (10). After etching and subsequent backside processing, the adhesive layer (20) is dissolved in acetone to separate the wafer (10) from the substrate (22). The protective coating (16) is then dissolved with a solvent to separate the ceramic layer (18) from the finished wafer (10).
A method of high temperature etching a semiconductor wafer comprising the steps of:
A method of high temperature etching a semiconductor wafer comprising the steps of:
A method of forming via holes in a semiconductor wafer using a high temperature etching comprising the steps of:
A method of forming via holes in a semiconductor wafer using a high temperature etching comprising the steps of:
A method of high temperature etching a semiconductor wafer comprising the steps of:
A method of high temperature etching a semiconductor wafer comprising the steps of
A method of high temperature etching a semiconductor wafer comprising the steps of:
A method of high temperature etching a semiconductor wafer comprising the steps of:
Dependencies are inferred from the claim text.