Capacitor for analog circuit, and manufacturing method thereof
AssigneeTokyo Electron Limited
InventorsKeizo Hosoda, Yusuke Muraki, Atsushi Sato, Harunori Ushikawa
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Abstract
Rapid thermal nitridation is carried out to form a nitride film on a lower electrode which is made of silicon, and a tantalum oxide dielectric film is further formed thereon. Then, wet oxidization is carried out to oxidize the lower electrode through the dielectric film and the nitride film, thus an oxide film is formed between the lower electrode and the nitride film. Further, silicon which is not bonded to nitrogen in the nitride film is oxidized, thus an oxide film whose effective thickness is equal to or greater than 2 nm. The oxidization also recrystallizes the dielectric film. Finally, an upper electrode is formed, and the capacitor is completed.
Claims17
A method for manufacturing a capacitor for an analog circuit comprising:
- forming a semiconductor layer to be a first electrode;
- forming a dielectric film on said semiconductor layer;
- oxidizing said semiconductor layer via said dielectric film to form an oxide film between said semiconductor layer and said dielectric film;
- and
- forming a second electrode on said dielectric film so as to face said first electrode.
A capacitor for an analog circuit comprising:
- a first electrode made of a semiconductor layer;
- a first oxide film formed on said first electrode;
- a nitride film formed on said first oxide film;
- a second oxide film formed on said nitride film;
- a dielectric film formed on said second oxide film;
- and
- a second electrode formed on said dielectric film so as to face said first electrode, wherein said dielectric film has a dielectric constant of a value higher than a dielectric constant of said nitride film.
A capacitor for an analog circuit comprising:
- a first electrode made of a semiconductor layer;
- a first oxide film formed on said first electrode;
- a nitride film formed on said first oxide film;
- a second oxide film formed on said nitride film;
- a dielectric film formed on said second oxide;
- and
- a second electrode formed on said dielectric film so as to face said first electrode, wherein the sum of the thicknesses of said first and second oxide films and the thickness of a virtual silicon oxide film whose dielectric strength is the same as the dielectric strength of said nitride film is equal to or greater than 2 nm, and is half the thickness of said dielectric film or less.
Dependencies are inferred from the claim text.