Method for forming an oxide layer on a nitride layer
AssigneeMacronix International Co., Ltd.
InventorKent Kuohua Chang
Life of this patent
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Abstract
A method for forming a semiconductor device that includes defining a substrate to include a peripheral section and a core section, masking the peripheral section of the substrate, growing a first dielectric layer over the core section of the substrate, depositing a first polysilicon layer over the first dielectric layer for forming at least one gate structure, growing a first oxide layer over the first polysilicon layer, depositing a nitride layer over the first oxide layer, implanting oxygen ions into the nitride layer, unmasking the peripheral section of the substrate, and growing a second oxide layer over the nitride layer, wherein the growth rate of the second oxide layer is increased due to the implantation of oxygen ions in the nitride layer.
Claims16
A method for forming a semiconductor device, comprising:
- defining a substrate to include a peripheral section and a core section;
- masking the peripheral section of the substrate;
- growing a first dielectric layer over the core section of the substrate;
- depositing a first polysilicon layer over the first dielectric layer for forming at least one gate structure;
- growing a first oxide layer over the first polysilicon layer;
- depositing a nitride layer over the first oxide layer;
- implanting oxygen ions into the nitride layer;
- unmasking the peripheral section of the substrate;
- and
- growing a second oxide layer over the nitride layer, wherein the growth rate of the second oxide layer is increased due to the implantation of oxygen ions in the nitride layer.
A method for forming a semiconductor device, comprising:
- defining a substrate;
- growing a first dielectric layer over a core section of the substrate;
- depositing a first polysilicon layer over the first dielectric layer for forming at least one gate structure;
- growing a first oxide layer over the first polysilicon layer;
- depositing a nitride layer over the first oxide layer;
- implanting oxygen ions into the nitride layer;
- and
- growing a second oxide layer over the nitride layer, wherein the growth rate of the second oxide layer is increased due to the implantation of oxygen ions in the nitride layer.
Dependencies are inferred from the claim text.