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US 6,551,873 B2Granted
Method for forming a tantalum oxide capacitor
AssigneeHynix Semiconductor Inc.
InventorsDong-su Park, Hyung Kyun Kim
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Abstract
A method for forming capacitor using a tantalum oxide (TaO5) layer is disclosed. Tantalum oxide is deposited by an atomic layer deposition ALD process so that the step-coverage of the tantalum oxide layer is improved, and accordingly the electrical characteristics of the capacitor are improved.
Claims10
A method for forming a tantalum oxide capacitor comprising:
- forming a nitride layer by nitriding an upper surface of a lower electrode;
- depositing a tantalum-nitride layer on the nitride layer by an atomic layer deposition (ALD) method;
- forming a tantalum oxide layer by oxidizing the tantalum-nitride layer;
- and
- forming an upper electrode on the tantalum oxide layer.
2 more elements
Dependencies are inferred from the claim text.