Semiconductor device and method of manufacturing the same
AssigneesHitachi, Ltd., Hitachi Hokkai Semiconductor, Ltd.
InventorsRiyouichi Oota, Tsugihiko Hirano, Atsushi Fujisawa, Takafumi Konno
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AssigneesHitachi, Ltd., Hitachi Hokkai Semiconductor, Ltd.
InventorsRiyouichi Oota, Tsugihiko Hirano, Atsushi Fujisawa, Takafumi Konno
Estimating the term…
A semiconductor device is disclosed, comprising a tape substrate which supports a semiconductor chip, an insulating adhesive layer disposed between the semiconductor chip and the tape substrate, an insulating sheet member laminated to the insulating adhesive layer and formed harder than the insulating adhesive layer, wires for connecting pads on the semiconductor chip with connecting terminals on the tape substrate, a sealing portion formed by sealing the semiconductor chip with resin, and plural solder balls provided on a back of the tape substrate. A die bonding layer for fixing the semiconductor chip thereto is composed of an insulating adhesive layer and the insulating sheet member laminated thereto. The die bonding layer is formed thick by such a multi-layer structure, whereby the resin balance of the surface and back of the semiconductor chip is improved to prevent warping of a package and improve the mounting temperature cyclicity and reflow characteristic.
A method of manufacturing a semiconductor device comprising a wiring board, a semiconductor chip disposed over the wiring board, an insulating, first layer disposed between the wiring board and the semiconductor chip, and an insulating, second layer disposed between the semiconductor chip and the insulating, first layer, the method comprising the steps of:
A method of manufacturing a semiconductor device comprising a wiring board, a semiconductor chip disposed over the wiring board, an insulating, first layer disposed between the wiring board and the semiconductor chip, and an insulating second layer disposed between the semiconductor chip and the insulating, first layer, the method comprising the steps of:
A method of manufacturing a semiconductor device comprising a wiring board, a semiconductor chip disposed over the wiring board, an insulating, first layer disposed between the wiring board and the semiconductor chip, and an insulating, second layer disposed between the semiconductor chip and the insulating, first layer, the method comprising the steps of:
A method of manufacturing a semiconductor device comprising a wiring board, a semiconductor chip disposed over the wiring board, an insulating, first layer disposed between the wiring board and the semiconductor chip, and an insulating, second layer disposed between the semiconductor chip and the insulating, first layer, the method comprising the steps of:
A method of manufacturing a semiconductor device comprising a wiring board, a semiconductor chip disposed over the wiring board, an insulating, first layer disposed between the wiring board and the semiconductor chip, and an insulating, second layer disposed between the semiconductor chip and the insulating, first layer, the method comprising the steps of:
A method of manufacturing a semiconductor device, comprising the steps of:
Dependencies are inferred from the claim text.