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US 6,551,854 B2Granted
Semiconductor device having bump electrodes and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsEiichi Hosomi, Yasuhiro Koshio
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Abstract
A semiconductor device includes a bonding layer which consists of an intermetallic compound and is positioned between a first electrode and a bump electrode. The bump electrode is mainly made of Au. The intermetallic compound of the bonding layer consist of Au of the bump electrode and a low melting metal.
Claims26
A semiconductor device comprising:
- a substrate;
- a first electrode on the substrate;
- bump electrode formed on the first electrode and mainly made of Au;
- a second electrode formed on the bump electrode;
- and
- a bonding layer provided between the first electrode and the bump electrode and mainly made of an intermetallic compound which consists of Au of the bump electrode and a low melting metal.
3 more elements
A semiconductor device comprising:
- a substrate including a first electrode;
- a bump electrode formed on the first electrode and mainly made of Au;
- a semiconductor element having a second electrode formed on the bump electrode;
- and
- a bonding layer provided between the first electrode and the bump electrode and mainly made of an intermetallic compound which consist of Au of the bump electrode and a low-melting metal.
2 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- (1) forming a low-melting metal layer on a first electrode;
- (2) forming a bump electrode on a second electrode, the bump electrode being mainly made of at least Au;
- and
- (3) bringing the low-melting metal layer into contact with the bump electrode, heating these components, and forming a bonding layer mainly made of an intermetalliclic compound which consist of Au of the bump electrode and the low melting metal.
1 more element
A semiconductor device comprising:
- a substrate;
- a first electrode on the substrate;
- a bump electrode formed on the first electrode and mainly made of Au;
- a second electrode formed on the bump electrode;
- and
- a bonding layer provided between the first electrode and the bump electrode and mainly made of an intermetallic compound which consists of Au of the bump electrode and a low melting metal, the intermetallic compound being more abundant than a eutectic alloy which consists of Au and the low-melting metal.
3 more elements
A semiconductor device comprising:
- a substrate including a first electrode;
- a bump electrode formed on the first electrode and mainly made of Au;
- a semiconductor element having a second electrode formed on the bump electrode;
- and
- bonding layer provided between the first electrode and the bump electrode and mainly made of an intermetallic compound which consists of Au of the bump electrode and a low-melting metal, the intermetallic compound being more abundant than a eutectic alloy which consists of Au and the low-melting metal.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a low-melting metal layer on a first electrode;
- forming a bump electrode on a second electrode, the bump electrode being mainly made of at least Au;
- and
- bringing the low-melting metal layer into contact with the bump electrode, heating these components, and forming a bonding layer mainly made of an intermetalliclic compound which consists of Au of the bump electrode and the low-melting metal, the intermetallic compound being more abundant than a eutectic alloy which consists of Au and the low-melting metal.
1 more element
Dependencies are inferred from the claim text.