Method for fabricating semiconductor light emitting device
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsJoon-seop Kwak, Kyo-yeol Lee
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Abstract
A method for fabricating a semiconductor light emitting device is provided. The method involves: forming a light emitting construct including a p-type electrode on a n-type substrate; etching a bottom surface of the n-type substrate; and forming an n-type electrode on the etched bottom surface of the n-type substrate. The bottom surface of the n-type substrate is wet or dry etched. The bottom surface of the n-type substrate is free from damage so that stable attachment of the etched bottom surface of the n-type substrate is ensured with improved properties of the light emitting device which may be a semicoductor laser diode.
Claims16
A method for fabricating a semiconductor light emitting device, the method comprising:
- forming a light emitting construct including a p-type electrode on an n-type substrate;
- etching a bottom surface opposite to a surface of the n-type substrate on which said light emitting construct is formed to form a uniformly flat surface opposite to said light emitting construct;
- and
- forming an n-type electrode on the uniformly flat surface opposite to said light emitting construct of the n-type substrate.
Dependencies are inferred from the claim text.