Exposure method
AssigneeSony Corporation
InventorNobuyuki Matsuzawa
Life of this patent
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Abstract
When selectively exposing a resist layer with vacuum ultraviolet rays for patterning into a predetermined shape, the present invention utilizes a polymer material constituting the resist layer and having at least one alicycle which is a saturated n-member ring (n is a number of carbon atoms constituting the ring and is an even number) and a fluorine substitution group in at least two carbon atoms constituting the alicycle and arranged alternately. Thus, by improving the light transmission ratio of the resist layer in the vacuum ultraviolet ray wavelength region, it becomes possible to perform a super-fine processing which cannot be obtained in the conventional method.
Claims7
An exposure method for exposing a resist layer with vacuum ultraviolet rays for patterning into a predetermined shape,
- applying a resist layer comprised of a polymer material to a semiconductor device layer,
- wherein the polymer material of the resist layer is a polymer material having at least one alicycle which is a saturated n-member ring (where n is a number of carbon atoms constituting the ring and is an even number) at least two carbon atoms constituting the alicycle which are arranged alternately have a fluorine substitution group bonded thereto;
- and
- selectively applying vacuum ultraviolet rays to the resist layer.
A method for exposing a resist layer with vacuum ultraviolet rays for patterning into a predetermined shape, comprising the steps of:
- applying a resist layer comprised of a polymer material to a semiconductor device layer,
- wherein the polymer material of the resist layer is a polymer material having at least one alicycle which is a saturated n-member ring (where n is a number of carbon atoms constituting the ring and is an even number) and at least two alternately arranged carbon atoms constituting the alicycle each has at least one fluorine atom bonded thereto;
- and selectively applying vacuum ultraviolet rays to the resist layer.
Dependencies are inferred from the claim text.