Ionization film-forming method and apparatus
AssigneeCanon Kabushiki Kaisha
InventorsHirohito Yamaguchi, Masahiro Kanai, Atsushi Koike, Katsunori Oya
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Abstract
The present invention provides a film forming method comprising the steps of ionizing sputtering particles and applying a periodically changing voltage to an electrode near a substrate, wherein a time for applying a voltage equal to or higher than an intermediate value between maximum and minimum values of the periodically changing voltage is shorter than a time for applying a voltage equal to or less than the intermediate value, and a film forming apparatus for carrying out the above method.
Claims49
A method of forming a deposited film by sputtering, comprising the steps of:
- ionizing sputtering particles, and
- applying a periodically changing voltage to an electrode near a substrate,
- wherein a time for applying a maximum value of the periodically changing voltage is shorter than a time for applying a minimum value of the periodically changing voltage, and the maximum value of the periodically changing voltage is 0 or a negative value.
A method of forming a deposited film by sputtering, comprising the steps of:
- ionizing sputtering particles;
- and
- applying a periodically changing voltage to an electrode near a substrate,
- wherein a maximum value of the periodically changing voltage is equal to or more than a value obtained by subtracting 10 V from a floating potential.
A method of forming a deposited film by sputtering, comprising the steps of:
- ionizing sputtering particles, and
- applying a periodically changing voltage to an electrode near a substrate,
- wherein a maximum value of the periodically changing voltage approximates to a floating potential.
An ionization sputtering apparatus in which a deposited film is formed by directing sputtering particles to a substrate, comprising:
- a sputtering chamber with an evacuating system;
- gas introducing means for introducing a processing gas into the sputtering chamber;
- a target placed in the sputtering chamber;
- ionizing means provided between the target and the substrate;
- an electrode disposed near the substrate;
- and
- voltage applying means for applying to the electrode a periodically changing voltage such that a time for applying a voltage equal to or higher than an intermediate value between maximum and minimum values of the periodically changing voltage is applied is shorter than a time for applying a voltage equal to or less than the intermediate value.
A method of forming a deposited film by sputtering, comprising the steps of:
- ionizing sputtering particles, and
- applying a periodically changing voltage to an electrode near a substrate,
- wherein a time for applying a voltage equal to or higher than an intermediate value between maximum and minimum values of the periodically changing voltage is shorter than a time for applying a voltage less than the intermediate value or wherein a time for applying a voltage higher than the intermediate value between maximum and minimum values of the periodically changing voltage is shorter than a time for applying a voltage equal to or less than the intermediate value, and the maximum value of the periodically changing voltage is 0 or a negative value.
Dependencies are inferred from the claim text.