Plasma processing system and method for manufacturing a semiconductor device by using the same

A plasma processing system comprising:

• a processing mount for mounting a substrate to be processed in a processing container;
• a planar plate capable of radiating an electromagnetic wave at a position in face-to-face relation with said substrate;
• a first magnetic field-forming means for forming a magnetic field, which is disposed at an outside or inside of said processing container so as to convert a given type of gas to a plasma by aid of the electromagnetic wave;
• a second magnetic field-forming means for forming a magnetic field different from the magnetic field formed by the first magnetic field-forming means;
• wherein a direction of a magnetic line of flux in the vicinity of said planar plate is controlled by combination of the magnetic field formed by said first magnetic field-forming means and the magnetic field formed by said second magnetic field-forming means;
• and
• wherein said second magnetic field-forming means is formed on said planar plate.

A plasma processing system using a parallel plate type electron cyclotron resonance comprising:

• a processing mount for mounting a substrate to be processed in a processing container;
• a planar plate capable of radiating an electromagnetic wave at a position in face-to-face relation with said substrate to be processed;
• a shower plate provided in contact with one side of said planar plate;
• a magnetic field-forming means provided with a magnet for forming a magnetic field, which is disposed at an outside or inside of the processing container so as to convert a given type of gas to a plasma by aid of the electromagnetic wave;
• and
• means for controlling a direction, on said planar plate, of the magnetic field formed by said magnetic field-forming means, which depends on the magnitude and direction of an electric field vector of the electromagnetic wave formed on the surface of said planar plate at said one side contacting said shower plate, wherein the given type of gas is converted to a plasma for processing the substrate to be processed.

A plasma processing system using a parallel plate type electron cyclotron resonance comprising:

• a processing mount for mounting a substrate to be processed in a processing container;
• a planar plate capable of radiating an electromagnetic wave at a position in face-to-face relation with said substrate to be processed;
• a shower plate provided in contact with one side of said planar plate;
• a magnetic field-forming means provided with a magnet for forming a magnetic field, which is disposed at an outside or inside of the processing container so as to convert a given type of gas to a plasma by aid of the electromagnetic wave, and
• means for controlling a distribution of a magnetic field on the surface of said planar plate, depending on a distribution of an electric field of the electromagnetic wave on the surface of said planar plate at said one side contacting said shower plate, in such a way that an efficiency of generation of the plasma formed through the interaction of the electric field of the electromagnetic wave formed on the surface of said planar plate and the magnetic field formed by said magnetic field-forming means has a difference within ±20% in a region of not smaller than 50% of the entire surface of said planar plate, wherein the given type of gas is converted to a plasma, with which said substrate to be processed is processed.

A plasma processing system using a parallel plate type electron cyclotron resonance comprising:

• a processing mount for mounting a substrate to be processed in a processing container;
• a planar plate capable of radiating an electromagnetic wave at a position in face-to-face relation with the substrate to be processed;
• a shower plate provided in contact with one side of said planar plate;
• a magnetic field-forming means provided with a magnet for forming a magnetic field for generating a plasma by aid of the electromagnetic wave;
• and
• means for controlling a distribution of a magnetic field on the planar plate so that a produce of a sine of the angle, on the planar plate, between the electric field vector of the electromagnetic wave and the magnitude of the electric field vector of the electromagnetic wave formed on the surface of said planar plate at said one side contacting said shower plate has a difference within ±20% in a region of not smaller than 50% of the entire surface of said planar plate, wherein a given type of gas is converted to a plasma, with which said substrate to be processed is processed.