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US 6,550,331 B2Granted
Semiconductor mechanical sensor
AssigneeDenso Corporation
InventorsTetsuo Fujii, Masahito Imai
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AssigneeDenso Corporation
InventorsTetsuo Fujii, Masahito Imai
Estimating the term…
A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.
A semiconductor mechanical sensor comprising:
A semiconductor mechanical sensor comprising:
A semiconductor mechanical sensor comprising:
A semiconductor mechanical sensor comprising:
A semiconductor mechanical sensor comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Microstructural systems ; Auxiliary parts of microstructural devices or systems: interconnects
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Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic…:…
Term ended 20 Aug 2013 (estimated)
1. Field of the Invention
The present invention relates to a method of manufacturing a semiconductor mechanical sensor, and more particularly, to a method for manufacturing an acceleration sensor or a yaw rate sensor.
2. Description of the Related Art
FIG. 1 is a plan view of a semiconductor mechanical sensor;
FIG. 2 is a view showing a cross section of FIG. 1 taken along the line A—A;
FIG. 3 is a view showing an electric circuit of a semiconductor mechanical sensor;
In the following description, semiconductor mechanical sensors according to embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a plan view of a semiconductor mechanical sensor according to an embodiment of the present invention and FIG. 2 is a view showing a cross section of FIG. 1 taken along the line A—A. In the description hereinafter, to explain three dimensional directions, a right-to-left direction will be referred to as the X-axis direction, an up-down direction will be referred to as the Y-axis direction and a direction which is perpendicular to the drawing sheets will be referred to as the Z-axis direction.
FIG. 1 is a plan view showing a basic structure of a semiconductor mechanical sensor according to the present invention. The semiconductor mechanical sensor comprises: a semiconductor substrate 1; a beam 3 which is formed on the semiconductor substrate 1, the beam having a weight 4; a first pair of electrodes 5 which is formed on one surface of the weight 4 and a wall surface which corresponds to the weight surface; and a second pair of electrod4es 6 which is formed on one surface of the weight 4 and a wall surface which corresponds to the weight surface in an axial direction of the weight 4 which is perpendicular to the first pair of electrodes 5.