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US 6,550,131 B1Granted
Method for making a thin-film magnetic head
AssigneeAlps Electric Co., Ltd.
InventorKiyoshi Sato
Life of this patent
Estimating the term…
Abstract
A method for making a thin-film magnetic head with a magnetoresistive layer having a desired shaped to facilitate narrowing of the track width, wherein the surface, in the depth direction, is not curved, and wherein the shape and magnetic anisotropy of each sublayer of the magnetoresistive layer is stabilized to ensure improved reading characteristics.
Claims6
A method for making a thin-film magnetic head comprising:
- forming a nonmagnetic lower gap layer on a lower shielding layer;
- forming a magnetoresistive layer on the entire surface of said lower gap layer;
- forming a first lift-off-type resist layer on a portion of said magnetoresistance layer, thereby resulting in first exposed regions of said magnetoresistance layer not covered with the first lift-off-type resist layer;
- removing by etching the first exposed regions of said magnetoresistive layer not covered with the first lift-off-type resist layer, thereby resulting in second exposed regions comprising portions of the lower gap layer not covered by the magnetoresistive layer;
- forming an intermediate gap layer on said second exposed regions;
- removing the first lift-off type resist layer;
- forming a second lift-off-type resist layer on the magnetoresistive layer and both ends of the intermediate gap layer, thereby resulting in third exposed regions comprising portions of the magnetoresistive layer or the intermediate gap layer not covered with the second lift-off-type resist layer, wherein a length of said magnetoresistive layer in a depth direction is determined by said first lift-off-type resist layer, and a width of said magnetoresistive layer in track width direction is determined by said second lift-off-type resist layer;
- removing by etching said third exposed regions not covered with the second lift-off-type resist layer, thereby resulting in fourth exposed regions comprising portions of the lower gap layer;
- forming an electrode layer on said fourth exposed regions;
- and
- removing the second lift-off-type resist layer.
8 more elements
The method for making a thin-film magnetic head according to claim 3, wherein a thickness of said intermediate gap layer is made substantially equal to a thickness of said magnetoresistive layer.
A method for making a thin-film magnetic head comprising:
- forming a nonmagnetic lower gap layer on a lower shielding layer;
- forming a magnetoresistive layer on the entire surface of said lower gap layer;
- forming a first lift-off-type resist layer on a portion of said magnetoresistance layer, thereby resulting in first exposed regions of said magnetoresistance layer not covered with the first lift-off-type resist layer;
- removing by etching the first exposed regions of said magnetoresistive layer not covered with the first lift-off-type resist layer, thereby resulting in second exposed regions comprising portions of the lower gap layer not covered by the magnetoresistive layer;
- forming an intermediate gap layer on said second exposed regions;
- removing the first lift-off type resist layer;
- forming a second lift-off-type resist layer on the magnetoresistive layer and both ends of the intermediate gap layer, thereby resulting in third exposed regions comprising portions of the magnetoresistive layer or the intermediate gap layer not covered with the second lift-off-type resist layer, wherein a length of said magnetoresistive layer in a depth direction is determined by said first lift-off-type resist layer, and a width of said magnetoresistive layer in track width direction is determined by said second lift-off-type resist layer, wherein a thickness of said intermediate gap layer is substantially equal to a thickness of said magnetoresistive layer;
- removing by etching said third exposed regions not covered with the second lift-off-type resist layer, thereby resulting in fourth exposed regions comprising portions of the lower gap layer;
- forming an electrode layer on said fourth exposed regions;
- and
- removing the second lift-off-type resist layer.
8 more elements
Dependencies are inferred from the claim text.