Circuit design method for designing conductive members with a multilayered structure to have antenna sized of proper values

A circuit design method for designing an integrated circuit device including conductive members with a multilayered structure connected to a gate insulating film of a transistor element, said method comprising the steps of:

• calculating an antenna ratio Ri, for 1≦i≦n, for each of n antenna units of said conductive members from an antenna size Mi, for 1≦i≦n, for each of the n antenna units of said conductive members and an actual area of Sj of said gate insulating film from the equation:
• Ri=Mi/Sj
• calculating individual damage Di , for 1≦i≦n, for each of the n antenna units of said conductive members with respect to said actual area Sj of said gate insulating film from a maximum permissible antenna ratio Rmi, for 1≦i≦n, for each of the n antenna units of said conductive members with respect to said actual area Sj of said gate insulating film from the equation:
• Di=f(Ri/Rmi)
• where f( ) is a predetermined function calculating a damage total amount ΣD=D1+D2+ . . . +Dn acting on said gate insulating film from the preceding calculating results;
• if said damage total amount ΣD is greater than or equal to 1, changing the design of an integrated circuit device such the damage total amount ΣD becomes less than 1.

A circuit design apparatus for use in design of an integrated circuit device including conductive members with a multilayered structure connected to a gate insulating film of a transistor element, comprising:

• data input means for receiving, as data, an actual area Sj of said gate insulating film, a maximum permissible antenna ratio Rmi, for 1≦i≦n, for each of n antenna units of said conductive members with respect to said area Sj, and an antenna size Mi, for 1≦i≦n, for each of said antenna units;
• ratio calculating means for calculating, in response to the data input to said data input means, an antenna ratio Ri, for 1≦i≦n, for each of the n antenna units of said conductive members with respect to the actual area Sj of said gate insulating film from the equation:
• Ri=Mi/Sj;
• individual calculation means for calculating individual damage Di, for 1≦i≦n, for each of the n antenna units of said conductive members with respect to the actual area Sj of said gate insulating film from the equation:
• Di=f(Ri/Rmi)
• where f( ) is a predetermined function;
• and
• total amount calculation means for calculating a damage total amount ΣD=D1+D2+ . . . +Dn acting on said gate insulating film from the calculating results in said individual calculation means.

An integrated circuit device comprising conductive members with a multilayered structure connected to a gate insulating film of a transistor element,

• wherein a maximum permissible antenna ratio Rmi, for 1≦i≦n, is set for each of n antenna units of said conductive members with respect to an actual area Sj of said gate insulating film;
• and
• an antenna size Mi, for 1≦i≦n, for each of the n antenna units of said conductive members with respect to the actual area Sj of said gate insulating film satisfies the relationship:
• Σ[f((Mi/Sj)/Rmi)]<1
• where f( ) is a predetermined function.

An integrated circuit device comprising conductive members with a multilayered structure connected to a gate insulating film of a transistor element,

• wherein a maximum permissible antenna ratio Rmi, for 1≦i≦n, is set for each of n antenna units of said conductive members with respect to an actual area Sj of said gate insulating film;
• and
• an antenna size Mi, for 1≦i≦n, for each of the n antenna units of said conductive members with respect to the actual area Sj of said gate insulating film satisfies the relationship:
• Σ[((Mi/Sj)/RMi)a]<1
• where a is a constant larger than 0.