Semiconductor device test system and test method
AssigneeNEC Corporation
InventorKunihiro Takeda
Life of this patent
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Abstract
A magnetic field is applied to a defective semiconductor device to be tested. A current is applied from a power supply to a wiring of the semiconductor device. At this time, a stress occurs to the wiring of the semiconductor device. A stress detector detects the stress and creates a first stress image. Next, a same magnetic field and a same current are applied to a good semiconductor device same in type and a stress is detected. By doing so, a second stress image as a comparison stress image is created. Next, a difference image between the first and second stress images is created by an image processor. As a result, only a stress resulting from a leak current is extracted. Next, the difference image is compared with a wiring pattern image of the semiconductor device to thereby specify a leakage portion.
Claims10
A semiconductor device test system for specifying a portion of a semiconductor device in which leak current occurs, comprising:
- a magnetic field generator for applying magnetic field to said semiconductor device;
- a power supply for allowing current to flow through a wiring of said semiconductor device in said magnetic field;
- a stress detector for detecting a stress occurring to said wiring by allowing current to flow in said magnetic field and outputting stress image data;
- an observation unit for observing a wiring pattern of said semiconductor device and outputting wiring pattern image data;
- and
- an image display unit for displaying stress images and wiring pattern images based on said stress image data and said wiring pattern image data, respectively.
A semiconductor device test method for specifying a portion of a semiconductor device in which leak current occurs, comprising the steps of:
- applying a magnetic field to said semiconductor device;
- allowing current to flow through a wiring of said semiconductor device in said magnetic field;
- detecting stress occurring to said wiring and creating a stress image by allowing current to flow through the wiring of said semiconductor device in said magnetic field;
- creating another stress image as a comparison stress image;
- creating a difference image between said stress image of said semiconductor device and said comparison stress image;
- and
- comparing said difference image with a wiring pattern image of said semiconductor device.
Dependencies are inferred from the claim text.