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AssigneeSharp Kabushiki Kaisha
InventorsSusumu Omi, Toshiyuki Okumura, Kazuhiko Inoguchi
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A nitride-type compound semiconductor laser device includes a substrate and a layered structure provided on the substrate. A light absorption layer having a bandgap smaller than a bandgap of an active layer in the layered structure is provided in a position between the cladding layer, which is provided on a side opposite to a mount surface with respect to the active layer, and a surface of the layered structure which is opposite to the mount surface.
A nitride-type semiconductor laser device, comprising a substrate and a layered structure provided on the substrate, wherein:
A nitride-type semiconductor laser device comprising a substrate and a layered structure provided on the substrate, wherein:
Dependencies are inferred from the claim text.
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Emitting light at a wavelength less than 900 nm: blue laser based on GaN or GaP
Buried stripe structure: with inner confining structure only between the active layer and the upper electrode
Substrates, e.g. growth, shape, material, removal or bonding: silicon based substrates
Characterised by the material: having specific optical properties, e.g. transparent electrodes
Term ended 31 Aug 2018 (estimated)
USPTO file history isn’t available for this patent, so only indexed dates are shown.
1. Field of the Invention
The present invention relates to a nitride-type compound semiconductor laser device capable of emitting light from a blue range to a UV range, and further relates to a laser apparatus incorporating the same.
2. Description of the Related Art
FIG. 1 is a cross-sectional view schematically illustrating a structure of a nitride-type compound semiconductor light emitting device according to Example 1 of the present example;
FIG. 2 is a cross-sectional view schematically illustrating a structure of a nitride-type compound semiconductor light emitting device according to Example 2 of the present example;
FIG. 3 is a cross-sectional view schematically illustrating a structure of a nitride-type compound semiconductor light emitting device according to Example 3 of the present example;
In this specification, the term “gallium nitride-type compound semiconductor” includes those in which Ga of gallium nitride (GaN) is partially substituted with another III group element,. e.g., GasAltIn1−s−tN (0<s≦1, 0≦t<1 and 0<s+t≦1), those in which some of the constituent atoms are substituted with impurity atoms or the like, and those to which an impurity is added.
Hereinafter, the present invention will be described by way of illustrative examples with reference to the accompanying figures.
Referring to FIG. 1, a gallium nitride-type compound semiconductor laser device 1000 according to Example 1 of the present invention will be described. FIG. 1 is a cross-sectional view schematically illustrating a structure of the semiconductor laser device 1000 of the present example.