TMR material having a substantially smooth and continuous ultra-thin magnetic layer
AssigneeMotorola, Inc.
InventorJon M. Slaughter
Life of this patent
Estimating the term…
Abstract
A TMR material (10) is provided having a substantially smooth and continuous ultra-thin magnetic layer. The TMR material is provided with a first tunnel barrier layer (46) is formed on a first magnetic layer (42) and a second magnetic layer (44) formed on the first tunnel barrier layer (46). The second magnetic layer (44) provides the substantially smooth and continuous ultra-thin magnetic layer as the second magnetic layer (44) has the substantially smooth and continuous layer across at least a portion of said first tunnel barrier layer (46) and a thickness not exceeding about 20 Å.
Claims14
A tunneling magneto resistance (TMR) material comprising:
- a first magnetic layer;
- a first tunnel barrier layer on said first magnetic layer;
- and
- a second magnetic layer having a substantially smooth and continuous layer across at least a portion of said tunnel barrier layer and a thickness not exceeding about 20 Å.
A memory, comprising:
- a substrate;
- and
- a plurality of TMR materials on said substrate, said plurality of TMR materials including:
- a first magnetic layer;
- a first tunnel barrier layer on said first magnetic layer;
- and
- a second magnetic layer having a substantially smooth and continuous layer across at least a portion of said tunnel barrier layer and a thickness not exceeding about 20 Å.
Dependencies are inferred from the claim text.