Optical modulator
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorMasaki Noda
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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorMasaki Noda
Estimating the term…
According to the voltage-current characteristic of a diode mounted on a high-frequency circuit substrate, a waveform of an applied electric signal is shaped into a desired waveform and applied to an electroabsorbing light modulating semiconductor element. The waveform of the modulated output light output from the optical modulator is highly improved although the extinction characteristic of the light modulating semiconductor element is not linear.
An optical modulator comprising:
An optical modulator comprising:
Dependencies are inferred from the claim text.
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For the control of the intensity, phase, polarisation or colour: operation of devices; Circuit arrangements, not otherwise provided for in this…
Modulating the optical absorption: using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
Function characteristic: linearised modulation; reduction of harmonic distortions
Optical devices or arrangements for the control of light by modification of
Term ended 19 Jan 2021 (estimated)
The present invention relates to an optical modulator for use in an optical communication system.
FIG. 15 is a conceptual diagram of a conventional optical modulator. As shown, the conventional optical modulator comprises an light modulating semiconductor element 1 of an electric field absorption type (hereinafter “an electroabsorption type light modulating semiconductor element”), a high-frequency circuit substrate 2 for feeding an RF signal to the electroabsorption type light modulating semiconductor element 1, a terminating resistor substrate 3, an input optical coupling system 7a and an output optical coupling system 7b. The terminating resistor substrate 3 includes a terminating resistor 3a for impedance matching, a through hole 3b, and a transmission line connecting them. The high-frequency circuit substrate 2, the electroabsorption type light modulating semiconductor element 1, and the terminating resistor substrate 3 are electrically connected by wires 6 or the like.
In the conventional optical modulator, the terminating resistor substrate 3 has a back side thereof serving as a grounding electrode which is electrically connected via the through hole 3b to the terminating resistor 3a. Also, the back side of the light modulating semiconductor element 1 is a grounding electrode. Hence, the light modulating semiconductor element 1 and the terminating resistor 3a are electrically connected in parallel with each other. Thus, the internal impedance of the optical modulator is a normalized impedance. The high-frequency circuit substrate 2 has a transmission line 5 for transmitting the RF signal.
FIG. 1 is a conceptual diagram of an optical modulator according to the first embodiment of the present invention;
FIG. 2 is a graph showing a voltage-current characteristic of a diode;
FIG. 3 is a conceptual diagram of an optical modulator according to the second embodiment of the present invention;
FIG. 1 is a conceptual diagram of an optical modulator showing Embodiment 1 of the present invention. FIG. 2 shows a voltage-current characteristic of a diode. The optical modulator comprises an light modulating semiconductor element 1 of an electric field absorption type (hereinafter “an electroabsorption type light modulating semiconductor element”) using the quantum confined Stark effect or the Franz-Keldysh effect, a high-frequency circuit substrate 2 for feeding an RF signal to the electroabsorption type light modulating semiconductor element 1, a terminating resistor substrate 3, an input optical coupling system 7a, and an output optical coupling system 7b. The terminating resistor substrate 3 is equipped with a terminating resistor 3a for impedance matching, a through hole 3b, and a transmission line for connecting them. The high-frequency circuit substrate 2, the light modulating semiconductor element 1, and the terminating resistor substrate 3 are connected by wires 6 or the like. The high-frequency circuit substrate 2 has a transmission line 5 mounted thereon for transmission of the RF signal and a diode 4 also mounted thereon to connect electrically to the transmission line 5.
The terminating resistor substrate 3 has a back side thereof serving as a grounding electrode which is electrically connected via the through hole 3b to the terminating resistor 3a. Also, the back side of the light modulating semiconductor element 1 is a grounding electrode. Hence, the light modulating semiconductor element 1 and the terminating resistor 3a are electrically connected in parallel with each other so as to make the internal impedance of the optical modulator a normalized impedance.
The operation of the modulator is now explained. As shown in FIG. 1, a continuously oscillated laser light is provided to the electroabsorption type light modulating semiconductor element 1 through the input optical coupling system 7a efficiently. Since the electroabsorption type light modulating semiconductor element 1 absorbs the laser light in response to the voltage of the RF signal applied through the high-frequency circuit substrate 2, the intensity of the laser light released from the emitting end of the light modulating semiconductor element 1 is modulated corresponding to the applied signal. The light released from the light modulating semiconductor element 1 is efficiently provided to the output optical coupling system 7b.