Liquid crystal displays and manufacturing methods thereof the interlayer insulating film having a thinner depth
AssigneeSamsung Electronics Co., Ltd.
InventorsByung-Hoo Jung, Chang-Won Hwang, Byung-Seong Bae
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Abstract
A source electrode and a metal pattern for a storage capacitor are formed on an insulating substrate, a silicon layer having a doped source region and a doped drain region is formed on the substrate and the source and the drain regions directly contact to the source electrode and the metal pattern. A gate insulating film is formed thereon, and a storage electrode is formed on the gate insulating film opposite the metal pattern. A passivation film covering the storage electrode is formed and the pixel electrode is formed thereon. The pixel electrode is directly connected to the drain region or to the metal pattern.
Claims20
A liquid crystal display, comprising:
- an insulating substrate;
- a silicon layer formed on the substrate and including a source region and a drain region, and a channel region located between the source region and the drain region;
- a gate insulating film covering the silicon layer;
- a gate electrode formed on the gate insulating film opposite the channel region;
- a storage electrode formed on the gate insulating film;
- an interlayer insulating film covering the gate electrode and the storage electrode;
- and
- a pixel electrode electrically connected to the drain region, formed on the interlayer insulating film, and overlying the storage electrode,
- wherein a depth of the interlayer insulating film between the storage electrode and the pixel electrode is thinner than rest of the interlayer insulating film.
A method for manufacturing a liquid crystal display, comprising the steps of:
- forming a silicon layer on an insulating substrate;
- forming a gate insulating film covering the silicon layer;
- forming a gate electrode and a storage electrode on the gate insulating film simultaneously;
- depositing an interlayer insulating film covering the gate electrode and the storage electrode;
- partially etching the interlayer insulating film to reduce the thickness of a first portion of the interlayer insulating film overlying the storage electrode;
- and
- forming a pixel electrode on the interlayer insulating film.
A method for manufacturing a liquid crystal display, comprising the steps of:
- forming a silicon layer as a first layer directly on an insulating substrate, wherein the silicon layer is not a buffer layer;
- forming a gate insulating film covering the silicon layer and then forming a gate electrode and a storage electrode respectively overlapping the silicon layer on the gate insulating film;
- and
- forming a source region and a drain region by doping the silicon layer using the gate electrode and the storage electrode as mask, leaving the silicon layer overlapped by the gate electrode and the storage electrode undoped.
Dependencies are inferred from the claim text.