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US 6,548,906 B2Granted
Method for reducing a metal seam in an interconnect structure and a device manufactured thereby
AssigneeAgere Systems Inc.
InventorsNace Layadi, Alvaro Maury
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Abstract
The present invention provides a method of manufacturing an interconnect structure. The method may include forming a nucleation layer, including a first metal, over a barrier layer and within an opening formed in a dielectric layer, forming an intermediate layer, including a second metal such as titanium nitride, over the nucleation layer and within the opening, and forming a plug portion layer, including the first metal, over the intermediate layer and within the opening. The first metal may be tungsten and the second metal may be a titanium nitride layer.
Claims9
An interconnect structure, comprising:
- a nucleation layer including a first metal located over a barrier layer within an opening in a dielectric layer, wherein the nucleation layer includes substantially uniform grains;
- an intermediate layer including a second metal located over the nucleation layer;
- and
- a bulk plug layer including the first metal located over the intermediate layer.
1 more element
Dependencies are inferred from the claim text.