Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenum

A semiconductor device comprising:

• a semiconductor substrate;
• a metal interconnect comprised of tungsten as a main constituent material and containing molybdenum formed on one principal side of the semiconductor substrate;
• a capacitor component comprising a first electrode and a second electrode formed on said one principal side of the semiconductor substrate wherein a high dielectric constant film or a ferroelectric film is formed between the first electrode and the second electrode;
• a plug electrically connected with the metal interconnect and the semiconductor device;
• and
• an electroconductive film formed between the metal interconnect and the plug.