Semiconductor device and production process thereof
AssigneeShinko Electric Industries Co., Ltd.
InventorNaohiro Mashino
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Abstract
In the production of semiconductor devices, a surface of the portion corresponding to the chip packaging area of the glass substrate is treated with plasma in a vacuum, a silicon chip is bonded-through its surface opposed to an electrode-bearing surface of the same to the activated surface of the glass substrate, and a wiring pattern having a predetermined configuration is formed in such a manner that a conductor exposed from the glass substrate is connected with an electrode of the silicon chip.
Claims12
A semiconductor device comprising a wiring substrate having attached thereto at least one semiconductor element, in which said semiconductor element is directly bonded through a Coulomb's force created between radicals of the atoms constituting said semiconductor element and reactive radicals on a surface of said wiring substrate, and a wiring pattern formed on the surface of said wiring substrate extends onto a surface of said semiconductor element and is electrically connected with an electrode formed on the surface of said semiconductor element.
Dependencies are inferred from the claim text.