Method for producing a thin distributed photodiode structure

A method for producing a distributed PN photodiode, the method comprising the steps:

• doping a first semiconductor substrate with a first dopant type, the first semiconductor substrate having first and second planar surfaces;
• forming a first oxide layer on one of the first surface of the first semiconductor substrate and a first surface of a second semiconductor substrate;
• bonding the first surface of the second semiconductor substrate to the first planar surface of the first semiconductor substrate;
• lapping the second planar surface of the first semiconductor substrate to a predetermined thickness;
• forming a plurality of active regions in a selected portion of the second planar surface of the first semiconductor substrate with a second dopant type;
• forming a second oxide layer on the second planar surface of the first semiconductor substrate;
• forming a plurality of contact openings in the second oxide layer, where each of the contact openings is adjacent one of the active regions;
• and
• forming a contact having a plurality of connection traces, where the connection traces are formed along the plurality of contact opening so as to electrically couple each of the plurality of second active regions to the contact.