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US 6,548,862 B2Granted
Structure of semiconductor device and method for manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHyuk-ju Ryu, Jong-hyon Ahn
Life of this patent
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Abstract
A semiconductor device and a method for manufacturing the same are provided. The structure of a semiconductor device includes gate electrodes having a T-shaped structure comprised of first and second gate electrodes having low gate resistance and low parasitic capacitance and a halo ion-implanted region in which a short channel effect can be effectively suppressed. The method for manufacturing the device is capable of performing high angle ion implantation without extending gate-to-gate space.
Claims15
A semiconductor device comprising:
- a first ion-implanted region formed in a semiconductor substrate;
- a second ion-implanted region formed at both sides of the first ion-implanted region;
- a halo ion-implanted region adjacent to the second ion-implanted region opposite the first ion-implanted region;
- a gate oxide layer formed on the semiconductor substrate;
- a first gate electrode formed on the gate oxide layer;
- a silicon nitride (Si3N4) layer formed on the semiconductor substrate and along side-walls of the gate oxide layer and the first gate electrode;
- an oxide layer adjacent to the silicon nitride (Si3N4) layer opposite the first gate electrode;
- a second gate electrode formed on the first gate electrode, the silicon nitride (Si3N4) layer, and the oxide layer;
- and
- first spacers formed on sidewalls of the second gate electrode and the oxide layer.
7 more elements
Dependencies are inferred from the claim text.