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US 6,548,854 B1Granted
Compound, high-K, gate and capacitor insulator layer
AssigneeAgere Systems Inc.
InventorsIsik C. Kizilyalli, Yi Ma, Pradip Kumar Roy
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Abstract
A gate or capacitor insulator structure using a first grown oxide layer, a high-k dielectric material on the grown oxide layer, and a deposited oxide layer on the high-k dielectric material. The deposited oxide layer is preferably a densified deposited oxide layer. A conducting layer, such as a gate or capacitor plate, may overlay the densified oxide layer.
Claims20
An integrated circuit having a silicon substrate with a surface, comprising:
- a densified grown oxide layer on the silicon substrate;
- a high-k dielectric layer on the densified grown oxide layer, the densified grown oxide layer reducing strain between the silicon substrate and the high-k dielectric layer;
- and
- a deposited oxide layer on the high-k dielectric layer.
1 more element
An integrated circuit having a silicon substrate with a surface, comprising:
- a grown densified silicon dioxide layer on the silicon substrate surface;
- a high-k dielectric layer on the grown densified oxide layer, the grown densified oxide layer reducing strain between the silicon substrate and the high-k dielectric layer;
- and
- a deposited densified silicon dioxide layer on the high-k dielectric layer.
1 more element
An integrated circuit having a silicon substrate with a surface, comprising:
- a densified grown oxide layer on the silicon substrate;
- no more than one high-k dielectric layer on the grown oxide layer, the grown oxide layer reducing strain between the silicon substrate and the high-k dielectric layer;
- and
- a deposited oxide layer on the high-k dielectric layer.
1 more element
Dependencies are inferred from the claim text.