Magnetic yoke structures in MRAM devices to reduce programming power consumption and a method to make the same
AssigneeSharp Laboratories of America, Inc.
InventorsWei Pan, Sheng Teng Hsu
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Abstract
An MRAM device includes a substrate; plural conductive lines, including a bit line and a word line; and a MTJ stack including a pair of magnetic yoke structures, wherein each of said yoke structures surrounds a conductive line. A method of fabricating a magnetic yoke in an MRAM structure includes preparing a substrate; forming a first conductive line on the substrate; fabricating a MTJ stack, including fabricating a first magnetic yoke structure about the first conductive line; forming a second conductive line on the MTJ stack; fabricating a second magnetic yoke about the second conductive line; depositing a layer of oxide on the structure; and metallizing the structure.
Claims20
An MRAM device comprising:
- a substrate;
- plural conductive lines, including a bit line and a word line;
- and
- a MTJ stack including a pair of magnetic yoke structures, wherein each of said yoke structures surrounds a conductive line.
An MRAM device comprising:
- a substrate, including a MOS transistor formed thereon;
- plural conductive lines, including a bit line and a word line, wherein said MOS transistor is connected to one of said conductive lines;
- and
- a MTJ stack including a pair of magnetic yoke structures, wherein each of said yoke structures surrounds a conductive line;
- wherein a first conductive line is formed on the substrate and is surrounded by an encapsulating magnetic yoke;
- and wherein said MTJ includes a fixed magnetic layer taken from the group of magnetic layers consisting of Ta, NiMn, CoFe;
- Ta, FeMn, CoFe;
- and Ta, NiFe, FeMn, CoFe;
- wherein said MTJ further includes a tunnel barrier layer and a free magnetic layer.
An MRAM device comprising:
- a substrate,
- plural conductive lines, including a bit line and a word line;
- a MOS transistor located on said substrate and connected to one of said conductive lines;
- a MTJ stack including a pair of magnetic yoke structures having horse shoe configurations, wherein each of said yoke structures surrounds a conductive line;
- wherein the programming current required for the MRAM is in the μA range.
Dependencies are inferred from the claim text.