Semiconductor device and method of fabricating the same

A method of fabricating a semiconductor device comprising:

• forming a gate electrode over a semiconductor substrate;
• forming a first interlevel insulating layer over the semiconductor substrate;
• forming a first protection layer over the first interlevel insulating layer;
• exposing a first portion of the semiconductor substrate by removing corresponding portions of the first interlevel insulating layer and the first protection layer;
• forming a first wiring layer on the first portion of the semiconductor substrate and the first protection layer;
• patterning the first protection layer and the first wiring layer;
• forming a second protection layer on a surface of the patterned first wiring layer;
• forming a second interlevel insulating layer on the first interlevel insulating layer and the second protection layer;
• exposing a second portion of the semiconductor substrate by removing corresponding portions of the first and second interlevel insulating layers;
• and
• forming a second wiring layer on the second portion of the semiconductor substrate and the second interlevel insulating layer.

A semiconductor device comprising:

• a semiconductor substrate;
• a first conductive line formed on the semiconductor substrate;
• a first interlevel insulating layer formed on the first conductive line and the semiconductor substrate;
• a first protective layer formed on the first interlevel insulating layer;
• a second conductive line formed on the first protective layer;
• a second protective layer formed on a top surface of the second conductive line;
• a third protective layer formed on sidewalls of the second conductive line;
• and
• a second interlevel insulating layer formed on the second and third protective layers and on the first interlevel insulating layer.