Capacitor having a structure capable of restraining deterioration of dielectric film, semiconductor device having the capacitor and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsYoshiaki Fukuzumi, Yusuke Kohyama
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Abstract
A semiconductor device having a structure capable of restraining deterioration of a dielectric film of a capacitor even when annealing is performed in a hydrogen-containing atmosphere. This semiconductor device includes one electrode or a plurality of dispersion electrodes formed in a dispersed manner above a semiconductor substrate, and a plate electrode commonly facing the one electrode or dispersion electrodes via respective dielectric films. This plate electrode includes a lower conductive layer formed on the dielectric films, a barrier layer formed on the lower conductive layer and an upper conductive layer formed on the barrier layer.
Claims35
A semiconductor device comprising:
- one electrode formed above a semiconductor substrate;
- and
- a plate electrode facing said one electrode via a dielectric film, said plate electrode including a lower conductive layer formed on said dielectric film, a barrier layer formed on said lower conductive layer and an upper conductive layer formed on said barrier layer,
- wherein said one electrode, said dielectric film and said lower conductive layer constitute a first capacitor, said lower conductive layer, said barrier layer and said upper conductive layer constitute a second capacitor, and a capacitance of said second capacitor is greater than that of said first capacitor.
The semiconductor device comprising:
- a plurality of dispersion electrodes formed in a dispersed manner above a semiconductor substrate;
- and
- a plate electrode facing said dispersion electrodes via respective dielectric films, said plate electrode including a lower conductive layer formed on said dielectric films, a barrier layer formed on said lower conductive layer and an upper conductive layer formed on said barrier layer,
- wherein each of said dispersion electrodes, each of said dielectric films and said lower conductive layer constitute a first capacitor, said lower conductive layer, said barrier layer and said upper conductive layer constitute a second capacitor, and a capacitance of said second capacitor is greater than that of said first capacitor.
A semiconductor device comprising:
- comprising:
- a plurality of dispersion electrodes formed in a dispersed manner above a semiconductor substrate;
- and
- a plate electrode facing said dispersion electrodes via respective dielectric films, said plate electrode including a lower conductive layer formed on said dielectric films, a barrier layer formed on said lower conductive layer and an upper conductive layer formed on said barrier layer, and said barrier layer being formed of a metal oxide containing at least one of Ta, Al, W, Cu, Ti, Co, Nb, Ru, and Ir.
A semiconductor device comprising:
- memory cells each having a cell capacitor which includes a storage electrode and a plate electrode facing said storage electrode via a dielectric film;
- a circuit which generates a potential to be applied to said plate electrode;
- and
- a capacitor connected in series between an output terminal of said circuit and said plate electrode.
Dependencies are inferred from the claim text.