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US 6,548,843 B2Granted
Ferroelectric storage read-write memory
AssigneeInternational Business Machines Corporation
InventorsHemantha K. Wickramasinghe, Ravi F. Saraf
Life of this patent
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Abstract
A memory device including at least one pair of spaced apart conductors and a ferroelectric material between the pair of conductors. The pair of conductors is spaced apart a distance sufficient to permit a tunneling current therebetween.
Claims91
A memory device, comprising:
- at least one pair of conductors spaced apart a distance sufficient to permit a tunneling current therebetween;
- at least one nucleic acid molecule extending between said pair of conductors, said at least one nucleic acid comprising at least one DNA molecule and at least one RNA molecule bound to said DNA so as to form at least one R-loop;
- and
- at least one ferroelectric nanoparticle bound to said at least one R-loop between said pair of conductors.
1 more element
Dependencies are inferred from the claim text.