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US 6,548,835 B1Granted
Optoelectronic device having a highly conductive carrier tunneling current aperture
AssigneeU-L-M photonics GmbH
InventorKarl Joachim Ebeling
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Abstract
An optoelectronic device having a highly conductive carrier tunneling current aperture. The device includes a centrally positioned current aperture formed from a quantum layer made of a III-IV-V semiconductor compound, which is doped with a first doping type. The current aperture is laterally confined by an oxide of the III-IV-V semiconductor compound. Adjacent layers are also formed of a semiconductor material that is doped with the first doping type.
Claims11
An optoelectronic device having a highly conductive carrier tunneling current aperture comprising:
- a centrally positioned current aperture formed from a quantum layer made of a III-IV-V semiconductor compound doped with a first doping type, laterally confirmed by an oxide of the III-IV-V semiconductor compound, and adjacent layers formed of a semiconductor material that is doped with the first doping type.
Dependencies are inferred from the claim text.