Color-optimized pixel array design

A CMOS photodiode, comprising:

• a red pixel photodiode section comprising a red junction diode having a first dimension and a red depletion region having a second dimension;
• a blue pixel photodiode section having a blue junction diode region having a third dimension and a blue depletion region having a fourth dimension;
• and
• a green pixel photodiode section;
• wherein said red first dimension is greater than said third dimension and said second dimension is greater than said fourth dimension, and said green pixel photodiode comprises a two layer junction diode comprising an upper layer and a lower layer, and a dual level depletion region comprising an upper region and a lower region.

A set of CMOS photodiode pixel regions, comprising:

• a red pixel region, comprising a red junction diode and a red depletion region;
• a green pixel region, comprising a green junction diode and a green depletion region;
• and
• a blue pixel region, comprising a blue junction diode and a blue depletion region;
• wherein said red junction diode is larger than said blue junction diode, and said red depletion region is larger than said blue depletion region.

A set of CMOS photodiode pixel regions, comprising:

• a red pixel region, comprising a red junction diode and a red depletion region;
• a green pixel region, comprising a green junction diode and a green depletion region;
• and
• a blue pixel region, comprising a blue junction diode and a blue depletion region;
• wherein said red junction diode is larger than said blue junction diode, and said red depletion region is larger than said blue depletion region, and said green pixel photodiode comprises a two layer junction diode comprising an upper layer and a lower layer, and a dual level depletion region comprising an upper region and a lower region.

A photodiode structure, comprising:

• a blue relatively shallow pixel photodiode region;
• a green relatively intermediate depth pixel photodiode region;
• and
• a red relatively deep pixel photodiode region;
• wherein said red photodiode region is deeper than said green photodiode region, and said green photodiode region is deeper than said blue photodiode region, and said green pixel photodiode region comprises a green junction diode and a green depletion region, said red pixel photodiode region comprises a red junction diode and a red depletion region, and wherein said red depletion region is larger than said green depletion region, and said green depletion region is larger than a blue depletion region.

A photodiode structure, comprising:

• a blue relatively shallow pixel photodiode region;
• a green relatively intermediate depth pixel photodiode region;
• and
• a red relatively deep pixel photodiode region;
• wherein said red photodiode region is deeper than said green photodiode region, and said green photodiode region is deeper than said blue photodiode region, and said green pixel photodiode region comprises a two layer junction diode comprising an upper layer and a lower layer, and a dual level depletion region comprising an upper region and a lower region.