Semiconductor device formed of single crystal grains in a grid pattern
AssigneeSony Corporation
InventorsTakashi Noguchi, Yasuhiro Kanaya, Masafumi Kunii, Yuji Ikeda, Setsuo Usui
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Abstract
A semiconductor device comprising a source/drain region and a channel region formed in a silicon thin film composed of a group of silicon single crystal grains which are each approximately rectangular-shaped and which are arranged in a grid pattern on the base body, where a selected orientation of the silicon single crystal grains to the surface of the base body is approximately the <100> direction.
Claims7
A semiconductor device comprising a source/drain region and a channel region formed in a silicon thin film composed of a group of silicon single crystal grains which are each approximately rectangular-shaped and which are arranged in a grid pattern on a base body, wherein a selected orientation of said silicon single crystal grains to the surface of said base body is approximately the <100> direction.
Dependencies are inferred from the claim text.