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US 6,548,825 B1Granted
Semiconductor device including barrier layer having dispersed particles
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsShigeo Yoshii, Kiyoshi Morimoto, Kiyoyuki Morita, Haruyuki Sorada
Life of this patent
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Abstract
The semiconductor device of the present invention includes: particles or interface states for passing charge formed on a p-type silicon substrate via a barrier layer; and particles for holding charge formed above the charge-passing particles via another barrier layer. The charge-holding particles are different from the charge-passing particles in parameters such as the particle diameter, the capacitance, the electron affinity, and the sum of electron affinity and forbidden bandwidth, to attain swift charge injection and release as well as stable charge holding in the charge-holding particles.
Claims37
A semiconductor device comprising:
- a substrate having a conductive layer;
- and
- a charge holding region including a barrier layer formed directly on the conductive layer for functioning as a barrier for charge transfer and a plurality of particles dispersed in the barrier layer so that the particles have different distances from the conductive layer from each other,
- wherein the capacitance of the particles is larger as the distance from the conductive layer is smaller, and
- wherein the particles are dispersed-at a higher dispersion density as the distance from the conductive layer is smaller.
2 more elements
A semiconductor device comprising:
- a substrate having a conductive layer;
- and
- a charge holding region including a barrier layer formed on the conductive layer for functioning as a barrier for charge transfer and a plurality of particles dispersed in the barrier layer so that the particles have different distances from the conductive layer from each other,
- wherein the capacitance of the particles is larger as the distance from the conductive layer is smaller, and
- wherein the mean diameter of the particles is larger as the distance from the conductive layer is smaller.
2 more elements
A semiconductor device comprising:
- a substrate having a conductive layer;
- a first SiO2 layer formed on the conductive layer;
- a SiOxNy layer (0≦x<2, 0<y≦4/3) formed on the first SiO2 layer;
- a second SiO2 layer formed on the SiOxNy layer;
- and
- particles formed on the second SiO2 layer.
3 more elements
A semiconductor device comprising:
- a substrate having a conductive layer;
- an insulating layer formed on the conductive layer;
- first particles formed on the insulating layer;
- a first SiO2 layer formed on the first particles;
- a SiOxNy layer (0≦x<2, 0<y≦4/3) formed on the first SiO2 layer;
- a second SiO2 layer formed on the SiOxNy layer;
- and
- second particles formed on the second SiO2 layer.
5 more elements
A semiconductor device comprising;
- a substrate having a conductive layer;
- a barrier layer formed directly on the conductive layer for functioning as a barrier for charge transfer;
- a charge holder continuously formed on the barrier layer;
- and
- quantized particles buried in at least part of the barrier layer.
2 more elements
A semiconductor device comprising:
- a substrate having a conductive layer;
- a first SiO2 layer formed on the conductive layer;
- a SiOxNy layer (0≦x<2, 0<y≦4/3) formed on the first SiO2 layer;
- a second SiO2 layer formed on the SiOxNy layer;
- and
- a charge holder formed on the second SiO2 layer.
3 more elements
A semiconductor device comprising:
- a substrate having a conductive layer;
- a first tunnel barrier film formed on the conductive layer;
- a quantized semiconductor layer formed on the first tunnel barrier film;
- a second tunnel barrier film formed on the first tunnel barrier film and the semiconductor layer;
- quantized semiconductor particles formed on the second tunnel barrier film in a state of being isolated from one another;
- and
- an insulating film formed on the second tunnel barrier film and the semiconductor particles.
4 more elements
A semiconductor device comprising:
- a substrate having a conductive layer;
- a first insulating layer formed on the conductive layer;
- first particles formed on the first insulating layer;
- a first barrier layer formed on the first particles for functioning as a barrier for charge transfer;
- second particles formed on the first barrier layer;
- a second barrier layer formed on the second particles for functioning as a barrier for charge transfer;
- and
- third particles formed on the second barrier layer,
- wherein the potential at each of the first and third particles against charge to be held or released is lower than the potential at the second particles.
6 more elements
A semiconductor device comprising:
- a substrate having a conductive layer;
- a first insulating layer formed on the conductive layer;
- first particles formed on the first insulating layer;
- a first barrier layer formed on the first particles for functioning as a barrier for charge transfer;
- second particles formed on the first barrier layer;
- a second barrier layer formed on the second particles for functioning as a barrier for charge transfer;
- and
- third particles formed on the second barrier layer,
- wherein the diameter of each of the first and third particles is larger than the diameter of the second particles.
6 more elements
A semiconductor device comprising:
- a substrate having a conductive layer;
- and
- a charge holding region including a barrier layer formed on the conductive layer for functioning as a barrier for charge transfer and a plurality of particles dispersed in the barrier layer so that the particles have different distances from the conductive layer from each other,
- wherein a barrier height at portions among the particles in the charge holding region is smaller as the distance from the conductive layer is smaller.
1 more element
A semiconductor device comprising:
- a substrate having a conductive layer;
- a first barrier layer formed on the conductive layer for functioning as a barrier for charge transfer;
- first particles formed on the first barrier layer;
- a second barrier layer formed on the first particles for functioning as a barrier for charge transfer;
- and
- second particles formed on the second barrier layer;
- wherein a potential at the second particles against charge to be held or released is lower than a potential at the first particles.
4 more elements
Dependencies are inferred from the claim text.