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US 6,548,683 B1Granted
Methods, complexes and system for forming metal-containing films
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
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Abstract
A method of forming a film on a substrate using Group IIIA metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Claims20
A composition comprising one or more hydride complexes of the formulas:
- and
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30)organic group,
- wherein none of the R groups are joined together to form ring systems, at least one of R3 and R4 is H, and R5 is H;
- and
- n=1 to 6.
4 more elements
Dependencies are inferred from the claim text.