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US 6,548,426 B1Granted
Method for improving a quality of dielectric layer and semiconductor device
AssigneesCanon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
InventorsSetsu Suzuki, Kazuo Maeda
Life of this patent
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Abstract
There is provided a method for improving film quality of an insulating film, which includes the steps of forming a silicon oxide film on a substrate, and heating the silicon oxide film by contacting an exposed surface of the silicon oxide film with a steam-containing atmosphere after the silicon oxide film is formed.
Claims7
A method of improving film quality of a silicon oxide insulating film, comprising the steps of:
- forming a silicon oxide insulating film containing carbon and hydrogen on a substrate;
- and
- heating the silicon oxide film by contacting an exposed surface of the silicon oxide film with a steam-containing atmosphere after the silicon oxide film is formed, so that the carbon and hydrogen are oxidized and removed from the silicon oxide insulating film.
A method of improving film quality of a silicon oxide insulating film, comprising the steps of:
- forming a silicon oxide film containing carbon and hydrogen on a substrate by chemical vapor deposition using a reaction gas containing a silicon-containing organic compound;
- and
- heating the silicon oxide film by contacting an exposed surface of the silicon oxide film with a steam-containing atmosphere after the silicon oxide film is formed, so that the carbon and hydrogen contained in the silicon oxide film are oxidized and removed from the silicon oxide film.
Dependencies are inferred from the claim text.