Process for producing oxide thin films
AssigneeASM Microchemistry Oy
InventorMatti Putkonen
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Abstract
This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapor-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction space and contacted with the substrate. According to the invention, an yttrium source material and a zirconium source material are alternately used as the metal source material so as to form an yttrium-stabilized zirconium oxide (YSZ) thin film on a substrate.
Claims23
A method for producing oxide thin film on a substrate in a reaction space by an ALD-type process, said method comprising:
- alternately feeding into said reaction space vapor phase pulses of a first metal source material, a second metal source material, and at least one oxygen source material capable of forming an oxide with the first metal source material and the second metal source material, wherein said first metal source material is a yttrium source material and said second metal source material is a zirconium source material, thereby forming a yttrium-stabilized zirconium oxide thin film on the substrate.
A method for producing oxide thin film on a substrate in a reaction space by an ALD-type process, said method comprising:
- alternately feeding into said reaction space vapor phase pulses of a first metal source material, a second metal source material, and at least one oxygen source material capable of forming an oxide with the first metal source material and the second metal source material, wherein said first metal source material is Y(thd)3, said second metal source material is dicyclopentadienyl zirconium dichloride (Cp2ZrCl2), and the oxygen source material is O3 or a mixture of O2 and O3, thereby forming a yttrium-stabilized zirconium oxide thin film on the substrate.
Dependencies are inferred from the claim text.