Multilayer anti-reflective coating process for integrated circuit fabrication
AssigneeAdvanced Micro Devices, Inc.
InventorsMarina V. Plat, Christopher F. Lyons, Scott A. Bell, Todd P. Lukanc
Life of this patent
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Abstract
A method utilizing a multilayer anti-reflective coating layer structure. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multilayer anti-reflective coating structure can be utilized to form gate stacks comprised of polysilicon and a dielectric layer. A photoresist is applied above the multilayer anti-reflective coating.
Claims20
A method of fabricating an integrated circuit, the method comprising:
- providing a first anti-reflective coating layer above a substrate;
- providing a second anti-reflective coating layer above the first anti-reflective coating layer;
- providing a photoresist layer above the second anti-reflective coating layer;
- patterning the photoresist layer, wherein a first thickness of the first anti-reflective coating layer and a second thickness of the second anti-reflective coating layer are configured to reduce reflections associated with the patterning step;
- removing the first anti-reflective coating layer and the second anti-reflective coating layer in accordance with a feature defined by the photoresist layer.
A method of forming a gate stack for an integrated circuit, the method comprising:
- providing a first anti-reflective coating layer and a second anti-reflective coating layer over a gate conductor layer;
- providing a photoresist layer over the second anti-reflective coating layer;
- patterning the photoresist layer to form a first feature in the photoresist layer;
- trim etching the photoresist layer to reduce size of the first feature, thereby forming a second feature;
- removing the first anti-reflective coating layer and the second anti-reflective coating layer in accordance with the second feature;
- and
- etching the gate conductor layer in accordance with the first anti-reflective coating layer and the second anti-reflective coating layer.
A method of forming a hard mask for an integrated circuit, the method comprising steps of:
- providing a dual layer anti-reflective coating above a substrate;
- providing a photoresist layer above the dual layer anti-reflective coating;
- patterning the photoresist layer to form a feature;
- and
- selectively removing the dual layer anti-reflective coating in accordance with the photoresist feature.
Dependencies are inferred from the claim text.