Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates

A method for planarizing a microelectronic substrate, comprising:

• engaging the microelectronic substrate with a planarizing medium that includes a planarizing pad having a planarizing surface and abrasive elements fixedly positioned at least proximate to the planarizing surface, the planarizing medium further including a planarizing liquid;
• moving at least one of the planarizing pad and the microelectronic substrate relative to the other to remove material from the microelectronic substrate;
• and
• restricting a passivating agent from adsorbing to the abrasive elements, separating the passivating agent from the abrasive elements or both restricting a passivating agent from adsorbing to the abrasive elements and separating the passivating agent from the abrasive elements.

A method for planarizing a microelectronic substrate, comprising:

• disposing a planarizing liquid on a planarizing surface of a planarizing pad having a plurality of abrasive elements fixedly positioned at least proximate to the planarizing surface;
• engaging the microelectronic substrate with the planarizing surface of the planarizing pad;
• and
• controlling a pH of the planarizing liquid, controlling an isoelectric point of the abrasive elements, or controlling both the pH and the isoelectric point to maintain the pH of the planarizing liquid at or above the isoelectric point of the abrasive elements while at least one of the microelectronic substrate and the planarizing pad moves relative to the other.

A method for forming a planarizing pad for removing material from a microelectronic substrate, comprising:

• selecting an abrasive element having an electrical potential with a first value;
• changing the electrical potential of the abrasive element to a second value according to an affinity of the abrasive element for a corrosion inhibiting agent;
• and
• fixedly positioning the abrasive element in a planarizing pad at least proximate to a planarizing surface of the planarizing pad.

A method for forming a planarizing pad for removing material from a microelectronic substrate, comprising:

• selecting an abrasive element having an isoelectric point with a first value;
• changing the isoelectric point of the abrasive element to a second value;
• and
• fixedly disposing the abrasive element in a planarizing pad at least proximate to a planarizing surface of the planarizing pad.

A method for removing material from a microelectronic substrate, comprising:

• engaging the microelectronic substrate with a planarizing medium that includes a planarizing pad having abrasive elements fixedly disposed therein and a planarizing liquid disposed on the planarizing pad, the planarizing liquid having a passivating agent;
• moving at least one of the planarizing pad and the microelectronic substrate relative to the other to remove material from the microelectronic substrate;
• and
• controlling an amount of the passivating agent adsorbed to the abrasive elements by directing electromagnetic radiation toward the planarizing medium.

A method for removing material from a microelectronic substrate, comprising:

• engaging the microelectronic substrate with a planarizing medium that includes a planarizing pad having abrasive elements fixedly disposed therein and a planarizing liquid disposed on the polishing pad, the planarizing liquid having a corrosion inhibiting agent;
• moving at least one of the planarizing pad and the microelectronic substrate relative to the other to remove material from the microelectronic substrate;
• and
• removing a portion of the corrosion-inhibiting agent adsorbed to the abrasive elements by directing ultraviolet radiation toward the abrasive elements.

An apparatus for removing material from a microelectronic substrate, comprising:

• a platen having a generally flat support surface;
• a planarizing pad supported on the platen and having a planarizing surface configured to support a planarizing liquid;
• a plurality of abrasive elements fixedly positioned in the planarizing pad at least proximate to the planarizing surface and having an aggregate isoelectric point selected to be less than a pH of the planarizing liquid;
• and
• a carrier configured to engage a microelectronic substrate and support the microelectronic substrate adjacent to the planarizing pad, at least one of the platen and the carrier being movable relative to the other.

A planarizing medium for removing material from a microelectronic substrate, comprising:

• a planarizing pad having a planarizing surface;
• a plurality of abrasive elements fixedly dispersed in the planarizing pad at least proximate to the planarizing surface, the abrasive elements having an isoelectric point;
• and
• a planarizing liquid adjacent to the planarizing pad, the planarizing liquid having a pH greater than the isoelectric point of the abrasive elements.

A planarizing medium for removing material from a microelectronic substrate, comprising:

• a planarizing pad having a planarizing surface;
• a plurality of first abrasive elements fixedly dispersed in the planarizing pad at least proximate to the planarizing surface, the first abrasive elements having a first zeta potential and a first isoelectric point;
• and
• a plurality of second abrasive elements fixedly dispersed in the planarizing pad at least proximate to the planarizing surface, the second abrasive elements having a second zeta potential and a second isoelectric point, an aggregate isoelectric point of the first and second abrasive elements being between the first and second isoelectric points.

An apparatus for removing material from a microelectronic substrate, comprising:

• a platen having a generally flat support surface;
• a planarizing medium supported by the platen, the planarizing medium including a planarizing pad having a planarizing surface configured to support a planarizing liquid;
• a plurality of abrasive elements fixedly positioned in the planarizing pad at least proximate to the planarizing surface;
• a carrier configured to engage a microelectronic substrate and support the microelectronic substrate adjacent to the planarizing pad, at least one of the platen and the carrier being movable relative to the other;
• and
• a high-frequency electromagnetic energy source operatively coupled to the planarizing medium to impart high frequency radiation to the planarizing medium.